iC-MSBSAFETY, iC-MSB2
SIN/COS SIGNAL CONDITIONER WITH 1Vpp DRIVER
Rev D2, Page 8/29
ELECTRICAL CHARACTERISTICS
Operating conditions: VDD = 4.3...5.5 V, Tj = -40...125 °C, IBN calibrated to 200 µA, reference point GNDS, unless otherwise stated.
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
Signal Level Controller ACO
601
Vs()hi
Saturation Voltage hi
at ACO vs. VDD
Vs() = VDD - V();
ADJ(8:0) = 0x11F, I() = -5 mA
ADJ(8:0) = 0x13F, I() = -10 mA
ADJ(8:0) = 0x15F, I() = -25 mA
ADJ(8:0) = 0x17F, I() = -50 mA
1
1
1
1
V
V
V
V
602
Isc()hi
Short-circuit Current hi in ACO
V() = 0 ... VDD - 1 V;
ADJ(8:0) = 0x11F
ADJ(8:0) = 0x13F
ADJ(8:0) = 0x15F
ADJ(8:0) = 0x17F
-10
-20
-50
-5
mA
mA
mA
mA
-10
-25
-50
-100
603 tr()
Current Rise Time in ACO
I(ACO): 0 → 90 % setpoint
1
ms
µs
604 tset()
Current Settling Time in ACO
Square control active, I(ACO): 50 → 100 %
400
setpoint
605 It()min
606 It()max
607 Vt()min
608 Vt()max
Control Range Monitoring 1:
lower limit
referenced to range ADJ(6:5)
referenced to range ADJ(6:5)
referenced to Vscq()
3
%Isc
%Isc
Control Range Monitoring 2:
upper limit
90
Signal Level Monitoring 1:
lower limit
40
%Vpp
%Vpp
Signal Level Monitoring 2:
upper limit
referenced to Vscq()
130
Test Current ERR
701 I(ERR)
Permissible Test Current
test mode activated
0
1
mA
Bias Current Source and Reference Voltages
801 IBN()
802 VPAH
Bias Current Source
MODE(3:0) = 0x01, I(NC) vs. VDDS
referenced to GND
180
45
200
50
220
55
µA
%VDD
mV
Reference Voltage VPAH
Reference Voltage V05
Reference Voltage V025
803 V05
450
500
50
550
804 V025
%V05
Power-Down-Reset
901 VDDon
Turn-on Threshold
(power-on release)
increasing voltage at VDD vs. GND
decreasing voltage at VDD vs. GND
VDDhys = VDDon − VDDoff
3.7
3.2
0.3
4
4.3
3.8
V
V
V
902 VDDoff
Turn-off Threshold
(power-down reset)
3.5
903 VDDhys
Clock Oscillator
A01 fclk()
Threshold Hysteresis
Internal Clock Frequency
MODE(3:0) = 0x0A, fclk(NS)
vs. GND, I() = 4 mA
120
160
200
0.4
kHz
V
Error Signal Input/Output, Pin ERR
B01 Vs()lo
B02
Saturation Voltage lo
Short-circuit Current lo
Isc()
vs. GND; V(ERR) ≤ VDD
4
2
mA
mA
V(ERR) > VTMon
B03 Vt()hi
B04 Vt()lo
B05 Vt()hys
B06 Ipu()
Input Threshold Voltage hi
Input Threshold Voltage lo
Input Hysteresis
vs. GND
2
V
V
vs. GND
0.8
300
-400
Vt()hys = Vt()hi − Vt()lo
V() = 0...VDD − 1 V, EPU = 1
EPU = 0
500
-300
500
mV
µA
kΩ
V
Input Pull-up Current
Input Pull-Up Resistor
Pull-up Voltage
-200
0.4
B07 Rpu()
B08 Vpu()
B09 VTMon
Vpu() = VDD - V(), I() = -5 µA, EPU = 1
Test Mode Activation Threshold increasing voltage at ERR
VDD +
1.5
V
B10 VTMoff
Test Mode Disabling Threshold
decreasing voltage at ERR
VDD +
0.5
V
B11 VTMhys
B12 Ilk()
Test Mode Hysteresis
Leakage Current
VTMhys = VTMon − VTMoff
tristate or reversed supply voltage
0.15
-1
0.3
-10
V
-50
µA
ICHAUS [ IC-HAUS GMBH ]
