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IC-MFP 参数 Datasheet PDF下载

IC-MFP图片预览
型号: IC-MFP
PDF下载: 下载PDF文件 查看货源
内容描述: 8折FAIL -SAFE P- FET驱动器 [8-FOLD FAIL-SAFE P-FET DRIVER]
分类和应用: 驱动器
文件页数/大小: 13 页 / 208 K
品牌: ICHAUS [ IC-HAUS GMBH ]
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iC-MFP  
8-FOLD FAIL-SAFE P-FET DRIVER  
Rev A2, Page 11/13  
APPLICATION NOTES  
Driving an P-channel MOSFET  
One typical field of application for iC-MFP is in the op-  
eration of P-FETs with microprocessor output signals,  
as shown in Figure 8.  
Vth(FET)  
(1)  
tt0..t1[µs] = Ciss@(Vds = hi)×  
Isc(NOUTx)lo  
iC−MFP  
IN1  
IN2  
IN3  
IN4  
IN5  
IN6  
IN7  
IN8  
NOUT1  
NOUT2  
NOUT3  
NOUT4  
NOUT5  
NOUT6  
NOUT7  
NOUT8  
VB  
(2)  
VB  
3.3V  
tt1..t2[µs] = Crss@(Vds = hi)×  
Isc(NOUTx)lo  
VD  
Microcontroller  
RL  
Vr(NOUTx)Vth(FET)  
EN5  
tt2..t3[µs] = Ciss@(Vds = lo)×  
EN10  
ENFS  
NOK  
Isc(NOUTx)lo  
(3)  
VBR  
VB  
GNDR  
GND  
VB  
Supply, Ground and  
Temperature Monitor  
ton = tt0..t1 +tt1..t2 +tt2..t3  
(4)  
Figure 8: Driving an P-channel MOSFET  
Ciss = Cgs +Cgd = voltage dependent gate-source and  
gate-drain capacitor [nF]  
Crss = Cgd = voltage dependent gate-drain capacitor  
[nF]  
Isc(NOUTx)lo = short circuit current lo at NOUTx [mA]  
tt0..t1 = dead time [µs]  
tt1..t2 = slope time at drain (Miller-Plateau) [µs]  
tt2..t3 = time to reach static gate voltage [µs]  
ton = overall turn on time [µs]  
VB = power supply VB [V]  
Vr(NOUTx) = configured static turn on voltage at  
NOUTx [V]  
Slowly switching of a transistor is done with a current  
limited driver. Figure 9 shows the different phases of  
a turn on process with resitive load. In Section t0 to  
t1 the gate of the transistors is loaded to the thresh-  
old voltage Vth(FET) and is a dead time. In section  
t1 to t2 the gate voltage keeps nearly constant (miller-  
plateau) during the drain voltage slope. The slew rate  
is depending on the current of the driver and the gate-  
drain capacitor of the transistor. In section t2 to t3 the  
gate voltage reach the static value. The transistor thus  
goes low ohmic and minimizes the power dissipation.  
The equations 1 to 4 are simplified and give an estima-  
tion of the timing on the basis of data from the specifi-  
cations of the device iC-MFP and the used transistor.  
The turn off looks similar to the turn on but with reverse  
run trough.  
Vth(FET) = threshold of the transistor [V]  
V(NOUTx)  
VB  
Vth(FET)  
Vr()  
t
VD  
VB  
GND  
t
t0  
t1  
t2  
t3  
Figure 9: On switching of a transistor