IC-HB_13 参数 Datasheet PDF下载

iC-HB

TRIPLE 155 MHz LASER SWITCH

Rev A4, Page 5/8

ELECTRICAL CHARACTERISTICS

Operating Conditions: VDD = 3.5...5.5 V, VTTL = 3.15...5.5 V, Tj = -25...125 °C unless otherwise stated

Item

No.

118

119

120

121

122

123

124

125

126

127

128

Symbol

Vt(EPx)hi

Vt(EPx)lo

Parameter

Input Threshold Voltage hi at

EP1, EP2, EPB

Input Threshold Voltage low at

EP1, EP2, EPB

Threshold Voltage at CI1, CI2,

CIB

Current Matching Chan-

nel1 / Channel2

Current in NER

Conditions

Min.

TTL = hi, ENx = open

TTL = hi, ENx = open

0.8

20

I(LDKx) < 5 mA

V(CI1) = V(CI2) = 0...VDD, I(LDKx) =

30...300 mA

Tj > Toff, V(NER) > 0.6 V

Tj > Toff, I(NER) = 1 mA

Vs(SYNx)hi = VDD

−

V(SYNx), I() = -1 mA,

V(EPx) < V(ENx)

I() = 1 mA, V(EPx) > V(ENx)

-20

3

0.9

0.9

1

1.4

1.1

20

600

0.4

0.4

-3

20

mA

mV

V

V

mA

mA

mV

V

Typ.

Max.

2

V

Unit

Vhys(EPx) Hysteresis

Vt(CIx)

CR()

I(NER)

Vsat(NER) Saturation Voltage at NER

Vs(SYNx)hi Saturation Voltage hi at SYN1,

SYN2, SYNB

Vs(SYNx)lo Saturation Voltage lo at SYN1,

SYN2, SYNB

Isc(SYNx)hi Short-Circuit Current hi at SYN1, V(EPx) < V(ENx), V(SYNx) = 0 V, VTTL = 3.3 V

SYN2, SYNB

Isc(SYNx)lo Short-Circuit Current lo at SYN1, V(EPx) > V(ENx), V(SYNx) = VTTL,

SYN2, SYNB

VTTL = 3.3 V

ELECTRICAL CHARACTERISTICS DIAGRAMS

I(LDK)

t

r

I

op

90 % I

op

t

f

10 % I

op

t

Figure 1: Laser current pulse in LDK