Preliminary Data Sheet
ICE60N130
Parameter
Thermal characteristics
Thermal resistance, junction-
case
a
Thermal resistance, junction-
ambient
a
Symbol
Conditions
Values
Min
Typ Max
Unit
R
thJC
R
thJA
leaded
1.6mm (0.063in.) from
case for 10 s
-
-
-
-
-
-
0.6
o
C/W
62
260
o
Soldering temperature, wave
T
sold
soldering only allowed at leads
C
Electrical characteristics
b
,
at
T
j
=25
o
C, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
GS
=0 V,
I
D
=250µA
V
DS
=V
GS
,
I
D
=250µA
V
DS
=600V,
V
GS
=0V,
o
T
j
=25 C
V
DS
=600V,
V
GS
=0V,
o
T
j
=150 C
V
GS
=±20 V,
V
DS
=0V
V
GS
=10V,
I
D
=11.5A,
o
T
j
=25 C
V
GS
=10V,
I
D
=11.5A,
o
T
j
=150 C
f=1
MHZ, open drain
600
2.5
-
-
-
650
3
0.1
-
-
-
3.5
1
µA
100
100
nA
Ω
-
-
0.4
4
-
-
Ω
V
Zero gate voltage drain current
I
DSS
Gate source leakage current
Drain-source
on-state resistance
Gate resistance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Output capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
C
oss
g
fs
t
d(on)
t
r
t
d(off)
t
f
I
GSS
R
DS (on)
-
0.13
0.15
R
G
V
GS
=0 V,
V
DS
=25 V,
f=1
MHz
V
GS
=0 V,
V
DS
=100 V,
f=1
MHz
V
DS
>2*I
D
*R
DS
, I
D
=11.5A
V
DS
=380V,
V
GS
=10V,
I
D
=23A,
R
G
=4Ω (External)
-
-
-
-
-
-
-
-
-
2650
943
8
80
23
10
5
67
4.5
-
-
-
-
-
-
-
-
-
pF
S
ns
SP-60N130-000-3
05/15/2013
2
ICEMOS [ Icemos Technology ]
