Preliminary Data Sheet
ICE4N70
Transfer Characteristics
Output Characteristics
12
10
8
12
10
8
VGS=10V
8V
7V
6
6
4
4
6V
2
2
TJ = 150˚C
25˚C
0
0
0
2
4
6
8
10
0
5
10
15
20
VGS - Gate-to-Source (V)
VDS - Drain-to-Source Voltage (V)
On Resistance vs Junction Temperature
On Resistance vs Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
ID = 2A
VGS = 10V
0
2
4
6
8
-50
-25
0
25
50
75
100 125 150
ID - Drain current (A)
TJ - Junction Temperature (˚C)
Gate Charge
Gate Threshold Voltage vs Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
1.4
1.3
1.2
1.1
VDS
=
480V
ID = 2A
ID = 250μA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
TJ - Junction Temperature (˚C)
Qg - Total Gate Charge (nC)
SP-4N70-000-3b
07/03/2013
4
ICEMOS [ Icemos Technology ]
