Preliminary Data Sheet
ICE2N65D
Output Characteristics
6
V
GS
=10 to 6V
Transfer Characteristics
6
5
I
D
- Drain Current (A)
4
3
2
T
J
= 150˚C
5
I
D
- Drain Current (A)
4
3
2
1
0
5V
1
25˚C
0
0
5
10
15
20
0
2
V
DS
- Drain-to-Source Voltage (V)
4
6
8
V
GS
- Gate-to-Source (V)
10
On Resistance vs Drain Current
2.0
R
DS(on)
- On-State Resistance (Ω)
1.8
1.6
1.4
1.2
V
GS
= 10V
On Resistance vs Junction Temperature
4.0
R
DS(on)
- On State Resistance
(Normalized)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= 10V
I
D
= 1A
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
I
D
- Drain current (A)
6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (˚C)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
GS(th)
- Gate Threshold Voltage
(Normalized)
9
8
7
6
5
V
DS
=
480V
I
D
= 2A
Gate Threshold Voltage vs Junction Temperature
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250μA
4
3
2
1
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (˚C)
SP-2N65D-000-0
11/22/2013
4
ICEMOS [ Icemos Technology ]
