Preliminary Data Sheet
ICE15N65
Output Characteristics
45
V
GS
=10V
Transfer Characteristics
45
40
I
D
- Drain Current (A)
40
I
D
- Drain Current (A)
35
30
25
20
15
5V
6V
7V
35
30
25
20
15
10
5
0
T
J
= 150˚C
25˚C
10
5
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
15
0
2
4
6
8
V
GS
- Gate-to-Source (V)
10
On Resistance vs Drain Current
600
R
DS(on)
- On-State Resistance (mΩ)
R
DS(on)
- On State Resistance
(Normalized)
500
400
On Resistance vs Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= 10V
I
D
= 7.5A
300
200
100
0
0
5
10
V
GS
= 10V
15
20
25
30
I
D
- Drain current (A)
35
40
45
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (˚C)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
GS(th)
- Gate Threshold Voltage
(Normalized)
9
8
7
6
5
V
DS
=
480V
I
D
= 15A
Gate Threshold Voltage vs Junction Temperature
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250μA
4
3
2
1
0
0
20
40
60
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (˚C)
SP-15N65-000-3a
06/05/2013
4
ICEMOS [ Icemos Technology ]
