Preliminary Data Sheet
ICE11N70
Transfer Characteristics
Output Characteristics
35
30
25
20
15
10
5
35
30
25
20
15
10
5
VGS=10V to 7V
6V
5V
TJ = 150˚C
25˚C
0
0
0
2
4
6
8
10
0
0
0
3
6
9
12
15
35
70
VGS - Gate-to-Source (V)
VDS - Drain-to-Source Voltage (V)
On Resistance vs Junction Temperature
On Resistance vs Drain Current
600
500
400
300
200
100
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
ID = 5.5A
VGS = 10V
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
ID - Drain current (A)
TJ - Junction Temperature (˚C)
Gate Charge
Gate Threshold Voltage vs Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
1.4
1.3
1.2
1.1
VDS
=
480V
ID = 11A
ID = 250μA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100 125 150
10
20
30
40
50
60
TJ - Junction Temperature (˚C)
Qg - Total Gate Charge (nC)
SP-11N70-000-4
07/17/2013
4
ICEMOS [ Icemos Technology ]
