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ICE10N60FP 参数 Datasheet PDF下载

ICE10N60FP图片预览
型号: ICE10N60FP
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 584 K
品牌: ICEMOS [ Icemos Technology ]
 浏览型号ICE10N60FP的Datasheet PDF文件第1页浏览型号ICE10N60FP的Datasheet PDF文件第2页浏览型号ICE10N60FP的Datasheet PDF文件第3页浏览型号ICE10N60FP的Datasheet PDF文件第4页浏览型号ICE10N60FP的Datasheet PDF文件第5页浏览型号ICE10N60FP的Datasheet PDF文件第6页浏览型号ICE10N60FP的Datasheet PDF文件第7页浏览型号ICE10N60FP的Datasheet PDF文件第9页  
Preliminary Data Sheet  
ICE10N60FP  
ICEMOS SUPERJUNCTION PATENT PORTFOLIO  
ICEMOS GRANTED PATENTS  
US7,429,772  
US7,439,178  
US7,446,018  
US7,579,607  
US7,723,172  
US7,795,045  
US7,846,821  
US7,944,018  
US8,012,806  
US8,030,133  
3D SEMI PATENTS LICENSED TO ICEMOS  
US7,041,560B2  
US7,023,069B2  
US7,364,994  
US7,227,197B2  
US7,304,944B2  
US7,052,982B2  
US7,339,252  
US7,410,891  
US7,439,583  
US7,227,197B2  
US6,635,906  
US6,936,867  
US7,015,104  
US9,109,110  
US7,271,067  
US7,354,818  
US7,052,982,  
US7,199,006B2  
Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for  
Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries.  
SP-10N60FP-000-2  
05/15/2013  
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