IBMN312164CT3
IBMN312804CT3
IBMN312404CT3
Preliminary
128Mb Synchronous DRAM - Die Revision B
Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3)
T5 T6 T7 T8
T0
T1
T2
T3
T4
CK
DQM
READ A
NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
CL = 2: DQM needed to mask
first, second bit of READ data.
CAS latency = 2
DIN A
DIN A
DIN A
DIN A
DIN A
0
0
1
2
3
3
tCK2, DQs
CL = 3: DQM needed to
mask first bit of READ data.
CAS latency = 3
DIN A
DIN A
DIN A
1
2
tCK3, DQs
: DQM high for CAS latency = 2
: DQM high for CAS latency = 3
©IBM Corporation. All rights reserved.
06K7582.H03335A
01/01
Use is further subject to the provisions at the end of this document.
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