Datasheet
IBM PowerPC 750GX RISC Microprocessor
DD1.X
Table 3-3. Package Thermal Characteristics
Characteristic
Symbol
Value
0.1
Unit
°C/W
°C/W
CBGA package thermal resistance, junction-to-case thermal resistance (typical)
CBGA package thermal resistance, junction-to-lead thermal resistance (typical)
θ
JC
θ
7.6
JB
Note: θ is the internal resistance from the junction to the back of the die. A heat sink customized to the end user application and
JC
ambient operating environment is required to ensure the die junction temperature is maintained within the limits defined in Table 3-2 on
page 15. For more information about thermal management, see Section 5.7 on page 61.
Table 3-4. DC Electrical Specifications
See Table 3-2 on page 15 for recommended operating conditions.
Voltage
Characteristic
Symbol
Unit
Notes
Min.
1.20
1.70
2.4
Max.
—
V
V
V
V
V
V
V
V
V
V
IH (1.8 V)
IH (2.5 V)
IH (3.3 V)
Input high voltage (all inputs except system clock [SYSCLK])
V
V
—
—
V
V
V
—
0.60
0.70
0.80
—
IL (1.8 V)
IL (2.5 V)
IL (3.3 V)
Input low voltage (all inputs except SYSCLK)
SYSCLK input high voltage
—
—
CV
CV
CV
1.20
1.90
2.1
IH (1.8 V)
IH (2.5 V)
IH (3.3 V)
—
—
CV
IL (1.8 V, 2.5 V,
3.3 V)
SYSCLK input low voltage
—
0.40
V
Input leakage current, V = applies to all OV levels
I
—
300
20
—
µA
µA
V
2
2
IN
DD
IN
Hi-Z (off state) leakage current, V = applies to all OV levels
I
—
IN
DD
TSI
V
V
V
1.30
2.00
2.40
OH (1.8 V)
OH (2.5 V)
OH (3.3 V)
Output high voltage, I = -4 mA
—
V
OH
—
V
V
OL (1.8 V, 2.5 V,
3.3 V)
Output low voltage, I = 4 mA
—
—
0.4
7
V
OL
Capacitance, V = 0 V, f = 1 MHz
C
pF
1
IN
IN
Notes:
1. Capacitance values are guaranteed by design and characterization, and are not tested.
2. Additional input current may be attributed to the Level Protection Keeper Lock circuitry. For details, see Section 5.9, Operational
and Design Considerations, on page 69.
Electrical and Thermal Characteristics
Page 16 of 73
750GX_ds_body.fm SA14-2765-02
September 2, 2005