IBM11S4325HP IBM11S2325HP
IBM11S4325HM IBM11S2325HM
2M/4M x 32 SO DIMM Module
Extended Data Out Mode Read Cycle
tRP
tRASP
VIH
RAS
tCPRH
VIL
tCRP
tHPC
tRCD
tCP
tCP
tRSH
tHCAS
tHCAS
tHCAS
VIH
CAS
VIL
tCAL
tRAL
tCAH
tCSH
tASC
tAR
tASR tRAH
tASC
tCAH
tASC
tCAH
VIH
VIL
Address
Row
Column 1
Column 2
Column N
tRAD
tRCH
tRRH
tWRH
tWRP
tRCS
VIH
VIL
WE
NOTE 1
tWP
tCAC
tCAC
tCPA
tCPA
tOFF
tAA
tAA
tRAC
tAA
tDOH
tDOH
tCAC
tCLZ
VOH
VOL
DOUT
Hi-Z
Data Out 1
Data Out 2
Data Out N
NOTE 1: Implementing WE at RAS time During a Read or Write Cycle is optional.
: “H” or “L”
Doing so will facilitate compatibility with future EDO DRAMs.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H1718
SA14-4471-00
Revised 4/96
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