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IBM0625404GT3B-10E 参数 Datasheet PDF下载

IBM0625404GT3B-10E图片预览
型号: IBM0625404GT3B-10E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 75 页 / 1245 K
品牌: IBM [ IBM ]
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IBM0625404GT3B IBM0625164GT3B  
IBM0625804GT3B IBM06254B4GT3B  
256Mb Double Data Rate Synchronous DRAM  
Advance  
Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8)  
CAS Latency = 2  
CK  
CK  
Read  
NOP  
Read  
NOP  
NOP  
NOP  
Command  
Address  
BAa, COL n  
BAa, COL b  
CL=2  
DQS  
DQ  
DOa-b  
DOa-n  
CAS Latency = 2.5  
CK  
CK  
Read  
NOP  
Read  
NOP  
NOP  
NOP  
Command  
Address  
BAa, COL n  
BAa,COL b  
CL=2.5  
DQS  
DQ  
DOa- n  
DOa- b  
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).  
When burst length = 4, the bursts are concatenated.  
When burst length = 8, the second burst interrupts the first.  
Don’t Care  
3 subsequent elements of data out appear in the programmed order following DO a-n.  
3 (or 7) subsequent elements of data out appear in the programmed order following DO a-b.  
Shown with nominal t , t  
, and t  
.
AC DQSCK  
DQSQ  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
29L0011.E36997  
10/99  
Page 22 of 75  
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