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IBM0612404GT3B-75N 参数 Datasheet PDF下载

IBM0612404GT3B-75N图片预览
型号: IBM0612404GT3B-75N
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 79 页 / 1017 K
品牌: IBM [ IBM ]
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IBM0612404GT3B  
IBM0612804GT3B  
128Mb Double Data Rate Synchronous DRAM  
Advance Rev 0.2  
Read Burst: CAS Latencies (Burst Length = 4)  
CAS Latency = 2  
CK  
CK  
Read  
NOP  
NOP  
NOP  
NOP  
NOP  
Command  
Address  
BA a,COL n  
CL=2  
DQS  
DQ  
DOa-n  
t
QCS  
t
QCH  
QFC  
(Optional)  
CAS Latency = 2.5  
CK  
CK  
Read  
NOP  
NOP  
NOP  
NOP  
NOP  
Command  
Address  
BA a,COL n  
CL=2.5  
DQS  
DQ  
DOa-n  
t
QCS  
t
QFC  
QCH  
(Optional)  
Don’t Care  
DO a-n = data out from bank a, column n.  
3 subsequent elements of data out appear in the programmed order following DO a-n.  
Shown with nominal t , t , and t  
.
DQSQ  
AC DQSCK  
QFC is an open drain driver. The output high level is achieved through an external pull up resistor connected to V  
.
DDQ  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0566.F39350  
5/00  
Page 22 of 79  
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