IBM0418A81QLAB IBM0436A81QLAB
IBM0418A41QLAB IBM0436A41QLAB
8Mb (256Kx36 & 512x18) and 4Mb (128Kx36 & 256Kx18) SRAM
SRAM Features
Late Write
Late Write function allows for write data to be registered one cycle after addresses and controls. This feature
eliminates one bus-turnaround cycle, necessary when going from a Read to a Write operation. Late Write is
accomplished by buffering write addresses and data so that the write operation occurs during the next write
cycle. When a read cycle occurs after a write cycle, the address and write data information are stored tempo-
rarily in holding registers. During the first write cycle preceded by a read cycle, the SRAM array will be
updated with address and data from the holding registers. Read cycle addresses are monitored to determine
if read data is to be supplied from the SRAM array or the write buffer. The bypassing of the SRAM array
occurs on a byte-by-byte basis. When only one byte is written during a write cycle, read data from the last
written address will have new byte data from the write buffer and remaining bytes from the SRAM array.
Mode Control
Mode control pins M1 and M2 are used to select four different JEDEC-standard read protocols. This SRAM
supports Single Clock, Pipeline (M1 = V , M2 = V ). This datasheet only describes Single Clock Pipeline
SS
DD
functionality. Mode control inputs must be set with power up and must not change during SRAM operation.
This SRAM is tested only in the Pipeline mode.
Sleep Mode
Sleep Mode is enabled by switching synchronous signal ZZ High. When the SRAM is in Sleep mode, the out-
puts will go to a High-Z state and the SRAM will draw standby current. SRAM data will be preserved and a
recovery time (t
) is required before the SRAM resumes normal operation.
ZZR
RQ Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V to allow for the
SS
SRAM to adjust its output driver impedance. The value of RQ must be 5X the value of the intended line
impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching is between
175Ω and 350Ω, with the tolerance described in Programmable Impedance Output Driver DC Electrical Char-
acteristics on page 10. The RQ resistor should be placed less than two inches away from the ZQ ball on the
SRAM module. The total external capacitance (including wiring ) seen by the ZQ ball should be minimized
(less than 7.5 pF).
Programmable Impedance and Power-Up Requirements
Periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by
drifts in supply voltage and temperature. One evaluation occurs every 64 clock cycles and each evaluation
may move the output driver impedance level only one step at a time towards the optimum level. The output
driver has 32 discrete binary weighted steps. The impedance update of the output driver occurs when the
SRAM is in High-Z. Write and Deselect operations will synchronously switch the SRAM into and out of High-
Z, therefore triggering an update. The user may choose to invoke asynchronous G updates by providing a G
setup and hold about the K clock to guarantee the proper update. There are no power-up requirements for
the SRAM; however, to guarantee optimum output driver impedance after power up, the SRAM needs 4096
clock cycles followed by a Low-Z to High-Z transition.
Power-Up and Power-Down Sequencing
The Power supplies need to be powered up in the following order: V , V
, V
, and Inputs. The power-
REF
DD
DDQ
down sequencing must be the reverse. V
can be allowed to exceed V by no more than 0.6V.
DDQ
DD
crrh3316.08
12/00
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Use is further subject to the provisions at the end of this document.
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