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IBM0436A41QLAB-3F 参数 Datasheet PDF下载

IBM0436A41QLAB-3F图片预览
型号: IBM0436A41QLAB-3F
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX36, 1.8ns, CMOS, PBGA119, BGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 26 页 / 141 K
品牌: IBM [ IBM ]
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IBM0418A81QLAB IBM0436A81QLAB  
IBM0418A41QLAB IBM0436A41QLAB  
8Mb (256Kx36 & 512x18) and 4Mb (128Kx36 & 256Kx18) SRAM  
DC Electrical Characteristics (TA = 0 to +85°C, VDD = 3.3V -5%, +10%)  
Parameter  
Symbol  
Min.  
Max.  
Units  
A
Notes  
1, 3  
0.470  
0.470  
0.450  
0.435  
0.420  
0.370  
I
DD3P  
I
DD3  
I
I
Average Power Supply Operating Current- x36  
DD3F  
(I  
= 0, V = V or V ZZ & SS = V )  
IN IH IL, IL  
DD3N  
OUT  
I
I
DD4  
DD5  
0.450  
0.450  
0.430  
0.415  
0.400  
0.350  
I
I
DD3P  
DD3  
I
I
Average Power Supply Operating Current - x18  
(I = 0, V = V or V ZZ & SS = V )  
DD3F  
1, 3  
A
DD3N  
OUT  
IN  
IH  
IL,  
IL  
I
I
DD4  
DD5  
Power Supply Standby Current  
(SS = V , ZZ = V . All other inputs = V or V , I = 0)  
I
1
-2  
-5  
150  
100  
+2  
mA  
mA  
µA  
SBSS  
IH  
IL  
IH  
IH IH  
Power Supply Sleep Current  
(ZZ = V All other inputs = V or V , I = 0)  
IL OUT  
I
1, 5  
SBZZ  
IH,  
IH  
Input Leakage Current, any input (except JTAG)  
(V = V or V  
I
LI  
)
DDQ  
IN  
SS  
Output Leakage Current  
(V = V or V , DQ in High-Z)  
I
+5  
µA  
LO  
OUT  
SS  
DDQ  
Output “High” Level Voltage (I = -8mA)  
V
V
-.4  
V
2, 4  
2, 4  
V
V
OH  
OH  
DDQ  
DDQ  
Output “Low” Level Voltage (I = +8mA)  
V
V
V
+ .4  
SS  
OL  
OL  
SS  
JTAG Leakage Current  
I
6
-50  
+10  
µA  
LIJTAG  
(V = V or V  
)
IN  
SS  
DD  
1. I  
= Chip Output Current.  
OUT  
2. Minimum Impedance Output Driver.  
3. The numeric suffix indicates part operating at speed as indicated in AC Characteristics on page 12: i.e., I  
indicates 3ns cycle.  
DD3  
4. JEDEC Standard JESD8-6 Class 1 Compatible.  
5. When ZZ = High, spec is guaranteed at 75°C junction temperature.  
6. For JTAG inputs only.  
PBGA Thermal Characteristics  
Item  
Symbol  
Rating  
1
Units  
Thermal Resistance Junction to Case  
RΘJC  
°C/W  
crrh3316.08  
12/00  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
Page 9 of 26  
 
 
 
 
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