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IBM0418A41QLAB-4 参数 Datasheet PDF下载

IBM0418A41QLAB-4图片预览
型号: IBM0418A41QLAB-4
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 256KX18, 2ns, CMOS, PBGA119, BGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 26 页 / 141 K
品牌: IBM [ IBM ]
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IBM0418A81QLAB IBM0436A81QLAB  
IBM0418A41QLAB IBM0436A41QLAB  
8Mb (256Kx36 & 512x18) and 4Mb (128Kx36 & 256Kx18) SRAM  
Capacitance (TA = 0 to +85°C, VDD = 3.3V -5%, +10%, f = 1MHz)  
Parameter  
Symbol  
Test Condition  
Max  
4
Units  
pF  
C
V
= 0V  
= 0V  
Input Capacitance  
IN  
IN  
C
V
V
Data I/O Capacitance (DQ0-DQ35)  
K Clock Capacitance  
4
pF  
OUT  
OUT  
OUT  
C
K
= 0V  
3.5  
pF  
KCL  
AC Input Characteristics  
Item  
Symbol  
Min  
Max  
Notes  
3
V
(ac)  
(ac)  
(ac)  
(ac)  
V
+ 0.4v  
REF  
AC Input Logic High  
IH  
V
V
- 0.4V  
AC Input Logic Low  
3
2
1
IL  
REF  
V
V
Clock Input Differential Voltage  
0.7V  
DIF  
V
Peak to Peak ac Voltage  
5% V  
(dc)  
REF  
REF  
REF  
1. The peak to peak AC component superimposed on V  
may not exceed 5% of the DC component of V  
.
REF  
REF  
2. Performance is a function of V and V levels to clock inputs.  
IH  
IL  
3. See the AC Input Definition figure below.  
AC Input Definition  
V
(ac)  
IH  
V
REF  
V
(ac)  
IL  
Programmable Impedance Output Driver DC Electrical Characteristics  
(TA = 0 to +85°C, VDD = 3.3V -5%, +10%, VDDQ = 1.5V)  
Parameter  
Output “High” Level Voltage  
Output “Low” Level Voltage  
Symbol  
Min.  
Max.  
Units  
V
Notes  
1, 3  
V
V
/ 2  
V
OH  
DDQ  
DDQ  
V
V
V / 2  
DDQ  
2, 3  
V
OL  
SS  
RQ  
VDDQ  
------------------  
2
-------- + 5  
5
1. I  
=
± 15% @ V = V / 2 For: 175Ω ≤ RQ 350.  
DDQ  
OH  
OH  
VDDQ  
------------------  
2
RQ  
5
--------  
2.  
I
=
± 15% @ V = V  
/ 2 For: 175Ω ≤ RQ 350.  
DDQ  
OL  
OL  
3. Parameter tested with RQ = 250and V  
= 1.5V.  
DDQ  
crrh3316.08  
12/00  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
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