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IBM014405BJ1-60 参数 Datasheet PDF下载

IBM014405BJ1-60图片预览
型号: IBM014405BJ1-60
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 30 页 / 340 K
品牌: IBM [ IBM ]
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IBM014405M IBM014405  
IBM014405P IBM014405B  
1M x 4 10/10 EDO DRAM  
EDO (Hyper Page) Mode Read Modify Write Cycle  
tRP  
tRASP  
VIH  
VIL  
RAS  
CAS  
tHPRWC  
tCRP  
tCP  
tCP  
tRCD  
VIH  
VIL  
tCAS  
tCAS  
tCAS  
tCSH  
tASC  
tASC  
tRAD  
tRAH  
tRAL  
tASR  
tASC  
tCAH  
tCAH  
tCAH  
VIH  
VIL  
Address  
Column 1  
Column 2  
Column N  
Row  
tCWL  
tRWL  
tCPA  
tAA  
tCPA  
tAA  
tCWL  
tRWD  
tAWD  
tCWD  
tWRP  
tWRH  
tAWD  
tCWD  
tAWD  
tCWD  
tRCS  
tRCS  
tRCS  
tWP  
tWP  
tWP  
VIH  
VIL  
WE  
OE  
NOTE 1  
tCAC  
tRAC  
tAA  
tCAC  
tCAC  
tOEH  
tOEH  
tOEA  
tOEH  
tOEA  
VIH  
VIL  
tOEA  
tOED  
tOED  
tOED  
tCLZ  
tOEZ  
DOUT  
tDS  
tOEZ  
DOUT  
tDS  
tOEZ  
tCLZ  
tCLZ  
VOH  
VOL  
DOUT  
Hi-Z  
Hi-Z  
DOUT  
tDS  
tDH  
DIN  
tDH  
DIN  
tDH  
DIN  
VIH  
VIL  
DIN  
NOTE 1: Implementing WE at RAS time During a Read or Write Cycle is optional.  
: “H” or “L”  
Doing so will facilitate compatibility with future EDO DRAMs.  
©IBM Corporation, 1996. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
27H6242  
SA14-4232-03  
Revised 6/96  
Page 20 of 29  
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