IBM0118165M IBM0118165
IBM0118165P IBM0118165B
1M x 16 10/10 EDO DRAM
Truth Table
Function
Standby
Read: Word
Read: Lower Byte
Read: Upper Byte
Write: Word
Early-Write
Write: Lower Byte
Early-Write
Write: Upper Byte
Early-Write
Read-Modify-Write
EDO (Hyper Page) Mode
Read
EDO (Hyper Page) Mode
Write
EDO (Hyper Page) Mode
Read-Modify-Write
RAS-Only Refresh
CAS-Before-RAS Refresh
Read
Hidden Refresh
Write
Self Refresh (LP version only)
L→H→L
H→L
L
L
L
L
H
H
X
X
Row
X
Col
X
Data In
High Impedance
1st Cycle
2nd Cycle
1st Cycle
2nd Cycle
1st Cycle
2nd Cycle
RAS
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H→L
L→H→L
LCAS
H→X
L
L
H
L
L
H
L
H→L
H→L
H→L
H→L
H→L
H→L
H
L
L
UCAS
H→X
L
H
L
L
H
L
L
H→L
H→L
H→L
H→L
H→L
H→L
H
L
L
WE
X
H
H
H
L
L
L
H→L
H
H
L
L
H→L
H→L
X
H
H
OE
X
L
L
L
X
X
X
L→H
L
L
X
X
L→H
L→H
X
X
L
Row
Column
Address Address
X
Row
Row
Row
Row
Row
Row
Row
Row
N/A
Row
N/A
Row
N/A
Row
X
Row
X
Col
Col
Col
Col
Col
Col
Col
Col
Col
Col
Col
Col
Col
N/A
N/A
Col
I/O0 - I/O15
High Impedance
Data Out
Lower Byte: Data Out
Upper Byte: High-Z
Lower Byte: High-Z
Upper Byte: Data Out
Data In
Lower Byte: Data In
Upper Byte: High-Z
Lower Byte: High-Z
Upper Byte: Data In
Data Out, Data In
Data Out
Data Out
Data In
Data In
Data Out, Data In
Data Out, Data In
High Impedance
High Impedance
Data Out
©IBM Corporation, 1995. All rights reserved.
Use is further subject to the provisions at the end of this document.
28H4721
SA14-4223-01
Revised 12/95
Page 4 of 32
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