IBM0118165 IBM0118165M
IBM0118165B IBM0118165P
1M x 16 10/10 EDO DRAM
EDO (Hyper Page) Mode Read Modify Write Cycle
tRP
tRASP
VIH
VIL
RAS
tHPRWC
tCRP
tCP
tCP
tRCD
VIH
VIL
UCAS
LCAS
tCAS
tCAS
tCAS
tCSH
tASC
tASC
tRAD
tRAH
tRAL
tASR
tASC
tCAH
tCAH
tCAH
VIH
VIL
Address
Column 1
Column 2
Column N
Row
tCWL
tRWL
tCPA
tAA
tCPA
tAA
tCWL
tRWD
tAWD
tCWD
tWRP
tWRH
tAWD
tCWD
tAWD
tCWD
tRCS
tRCS
tRCS
tWP
tWP
tWP
VIH
VIL
WE
OE
NOTE 1
tCAC
tRAC
tAA
tCAC
tCAC
tOEH
tOEH
tOEA
tOEH
tOEA
VIH
VIL
tOEA
tOED
tOED
tOED
tCLZ
tOEZ
DOUT
tDS
tOEZ
DOUT
tDS
tOEZ
tCLZ
tCLZ
VOH
VOL
DOUT
Hi-Z
Hi-Z
DOUT
tDS
tDH
DIN
tDH
DIN
tDH
DIN
VIH
VIL
DIN
NOTE 1: Implementing WE at RAS time During a Read or Write Cycle is optional.
: “H” or “L”
Doing so will facilitate compatibility with future EDO DRAMs.
©IBM Corporation, 1995. All rights reserved.
Use is further subject to the provisions at the end of this document.
28H4721
SA14-4223-01
Revised 12/95
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