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IBM0118160MT3-70 参数 Datasheet PDF下载

IBM0118160MT3-70图片预览
型号: IBM0118160MT3-70
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 X 0.825 INCH, TSOP2-50/44]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 27 页 / 284 K
品牌: IBM [ IBM ]
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IBM0118160 IBM0118160M
IBM0118160B IBM0118160P
1M x 16 10/10 DRAM
Read Cycle
-50
Symbol
t
RAC
t
CAC
t
AA
t
OEA
t
RCS
t
RCH
t
RRH
t
RAL
t
CAL
t
CLZ
t
OH
t
OHO
t
OFF
t
OEZ
t
CDD
Parameter
Min.
Access Time from RAS
Access Time from CAS
Access Time from Address
Access Time from OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Column Address to CAS Lead Time
CAS to Output in Low-Z
Output Data Hold Time
Output Data Hold from OE
Output Buffer Turn-Off Delay
Output Buffer Turn-Off Delay from OE
CAS to D
IN
Delay Time
0
0
0
25
25
0
3
3
13
Max.
50
13
25
13
13
13
Min.
0
0
0
30
30
0
3
3
15
Max.
60
15
30
15
15
15
Min.
0
0
0
35
35
0
3
3
15
Max.
70
20
35
20
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
5
6
3
4
4
1, 2, 3
1, 3
2, 3
3
-60
-70
Units
Notes
1. Operation within the t
RCD
(max.) limit ensures that t
RAC
(max.) can be met. t
RCD
(max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(max.) limit, then access time is controlled by t
CAC
.
2. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference point only. If t
RAD
is greater than the specified t
RAD
(max.) limit, then access time is controlled by t
AA
.
3. Measured with the specified current load and 100pF.
4. Either t
RCH
or t
RRH
must be satisfied for a read cycle.
5. t
OFF
(max) and t
OEZ
(max) define the time at which the output achieves the open circuit condition and are not referenced to output
voltage levels.
6. Either t
CDD
or t
OED
must be satisfied.
43G9388
SA14-4209-04
Revised 11/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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