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IBM0117805T3-6R 参数 Datasheet PDF下载

IBM0117805T3-6R图片预览
型号: IBM0117805T3-6R
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 X 0.725 INCH, TSOP2-28]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 30 页 / 338 K
品牌: IBM [ IBM ]
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IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO.
IBM0117805 IBM0117805M
IBM0117805B IBM0117805P
2M x 8 11/10 EDO DRAM
Features
• 2,097,152 word by 8 bit organization
• Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
• Standard Power (SP) and Low Power (LP)
• 2048 Refresh Cycles
- 32 ms Refresh Rate (SP version)
- 128 ms Refresh Rate (LP version)
• High Performance:
-50 -60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Column Address Access Time
t
RC
Cycle Time
t
HPC
EDO (Hyper Page) Mode
Cycle Time
50
13
25
84
20
60
15
30
-6R
60
17
30
-70 Units
70
20
35
ns
ns
ns
ns
ns
• Low Power Dissipation
- Active (max) - 100 mA / 90 mA / 80 mA
- Standby: TTL Inputs (max) - 1.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.2 mA (LP version)
- Self Refresh (LP version only)
- 200µA (3.3 Volt)
- 300µA (5.0 Volt)
• Extended Data Out (Hyper Page) Mode
• Read-Modify-Write
• RAS Only and CAS before RAS Refresh
• Hidden Refresh
• Package:
TSOP-II 28 (400milx725mil)
104 104 124
25
25
30
Description
The IBM0117805 is a dynamic RAM organized
2,097,152 words by 8 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5µm
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 21
addresses required to access any bit of data are
multiplexed (11 are strobed with RAS, 10 are
strobed with CAS).
Pin Assignments
(Top View)
Pin Description
RAS
CAS
Row Address Strobe
Column Address Strobe
Read/Write Input
Address Inputs
Output Enable
Data Input/Output
Power (+3.3V or +5.0V)
Ground
Vcc
I/O0
I/O1
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A2
A3
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vss
I/O7
I/O6
I/O5
I/O4
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
WE
A0 - A10
OE
I/O0 - I/O7
V
CC
V
SS
28H4724
SA14-4221-04
Revised 11/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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