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IBM0116400PT1-50 参数 Datasheet PDF下载

IBM0116400PT1-50图片预览
型号: IBM0116400PT1-50
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 X 0.675 INCH, TSOP-26/24]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 28 页 / 288 K
品牌: IBM [ IBM ]
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IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V.
IBM0116400 IBM0116400M
IBM0116400B IBM0116400P
4M x 4 12/10 DRAM
Features
• 4,194,304 word by 4 bit organization
• Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
• Standard Power (SP) and Low Power (LP)
• 4096 Refresh Cycles
- 64 ms Refresh Rate (SP version)
- 256 ms Refresh Rate (LP version)
• High Performance:
-50
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Column Address Access Time
t
RC
Cycle Time
t
PC
Fast Page Mode Cycle Time
50ns
13ns
25ns
95ns
35ns
-60
60ns
15ns
30ns
110ns
40ns
-70
70ns
• Low Power Dissipation
- Active (max) - 85 mA / 75 mA / 65 mA
- Standby: TTL Inputs (max) - 2.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.2 mA (LP version)
- Self Refresh (LP version only)
- 200µA (3.3 Volt)
- 300µA (5.0 Volt)
• Read-Modify-Write
• RAS Only and CAS before RAS Refresh
• Hidden Refresh
20ns
35ns
130ns
45ns
• Package: SOJ-28/24 (400milx725mil)
SOJ-26/24 (300milx675mil)
TSOP-26/24 (300milx675mil)
Description
The IBM0116400 is a dynamic RAM organized
4,194,304 words by 4 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5µm
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 22
addresses required to access any bit of data are
multiplexed (12 are strobed with RAS, 10 are
strobed with CAS).
Pin Assignments
(Top View)
28/24
Vcc
I/O0
I/O1
WE
RAS
A11
1
2
3
4
5
6
28
27
26
25
24
23
Vss
I/O3
I/O2
CAS
OE
A9
Vcc
I/O0
I/O1
WE
RAS
A11
1
2
3
4
5
6
Pin Description
RAS
Row Address Strobe
Column Address Strobe
Read/Write Input
Address Inputs
Output Enable
Data Input/Output
Power (+3.3V or +5.0V)
Ground
26/24
26
25
24
23
22
21
Vss
I/O3
I/O2
CAS
OE
A9
CAS
WE
A0 - A11
OE
I/O0 - I/O3
V
CC
A10
A0
A1
A2
A3
Vcc
9
10
11
12
13
14
20
19
18
17
16
15
A8
A7
A6
A5
A4
Vss
A10
A0
A1
A2
A3
Vcc
8
9
10
11
12
13
19
18
17
16
15
14
A8
A7
A6
A5
A4
Vss
V
SS
43G9396
SA14-4203-04
Revised 11/96
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
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