欢迎访问ic37.com |
会员登录 免费注册
发布采购

HY5DU561622FTP-5 参数 Datasheet PDF下载

HY5DU561622FTP-5图片预览
型号: HY5DU561622FTP-5
PDF下载: 下载PDF文件 查看货源
内容描述: 256M ( 16Mx16 ) DDR SDRAM [256M(16Mx16) DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 28 页 / 180 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号HY5DU561622FTP-5的Datasheet PDF文件第1页浏览型号HY5DU561622FTP-5的Datasheet PDF文件第2页浏览型号HY5DU561622FTP-5的Datasheet PDF文件第4页浏览型号HY5DU561622FTP-5的Datasheet PDF文件第5页浏览型号HY5DU561622FTP-5的Datasheet PDF文件第6页浏览型号HY5DU561622FTP-5的Datasheet PDF文件第7页浏览型号HY5DU561622FTP-5的Datasheet PDF文件第8页浏览型号HY5DU561622FTP-5的Datasheet PDF文件第9页  
1HY5DU561622FTP-5  
HY5DU561622FTP-4  
DESCRIPTION  
The Hynix HY5DU561622FTP-5, -4 series are a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM,  
ideally suited for the point-to-point applications which requires high bandwidth.  
The Hynix 16Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the  
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,  
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-  
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible  
with SSTL_2.  
FEATURES  
VDD, VDDQ = 2.5V + / - 0.2V for 200MHz  
VDD, VDDQ = 2.6V + 0.1 / -0.2V for 250MHz  
All addresses and control inputs except Data, Data  
strobes and Data masks latched on the rising edges  
of the clock  
All inputs and outputs are compatible with SSTL_2  
interface  
Write mask byte controls by LDM and UDM  
Programmable /CAS latency 3 / 4 supported  
JEDEC standard 400mil 66pin TSOP-II with 0.65mm  
pin pitch  
Programmable Burst Length 2 / 4 / 8 with both  
sequential and interleave mode  
Fully differential clock inputs (CK, /CK) operation  
Double data rate interface  
Internal 4 bank operations with single pulsed /RAS  
tRAS Lock-Out function supported  
Source synchronous - data transaction aligned to  
bidirectional data strobe (DQS)  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
x16 device has 2 bytewide data strobes (LDQS,  
UDQS) per each x8 I/O  
Full, Half and Matched Impedance(Weak) strength  
driver option controlled by EMRS  
Data outputs on DQS edges when read (edged DQ)  
Data inputs on DQS centers when write (centered  
DQ)  
Data(DQ) and Write masks(DM) latched on the both  
rising and falling edges of the data strobe  
ORDERING INFORMATION  
Power Supply  
Clock  
Frequency  
Max. Data  
Part No.  
interface  
Package  
(VDD, VDDQ)  
2.6V + 0.1 / - 0.2V  
2.5V + / - 0.2V  
Rate  
HY5DU561622FTP-4  
HY5DU561622FTP-5  
250MHz  
200MHz  
500Mbps/pin  
400Mbps/pin  
400mil 66pin  
TSOP-II  
SSTL-2  
Rev. 1.1 / Mar. 2008  
3
 复制成功!