HY57V641620HG-I Series
4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG(L)T-8I
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
125MHz(8ns)
100MHz(10ns)
83MHz(12ns)
3CLKs
2CLKs
3CLKs
3CLKs
2CLKs
3CLKs
7CLKs
5CLKs
6CLKs
10CLKs
7CLKs
9CLKs
3CLKs
3CLKs
2CLKs
6ns
6ns
6ns
2.0ns
2.0ns
2.0ns
HY57V641620HG(L)T-PI
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
100MHz(10ns)
83MHz(12ns)
66MHz(15ns)
2CLKs
2CLKs
2CLKs
2CLKs
2CLKs
2CLKs
5CLKs
5CLKs
4CLKs
7CLKs
7CLKs
6CLKs
2CLKs
2CLKs
2CLKs
6ns
6ns
6ns
2.0ns
2.0ns
2.0ns
HY57V641620HG(L)T-SI
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
100MHz(10ns)
83MHz(12ns)
66MHz(15ns)
3CLKs
2CLKs
2CLKs
2CLKs
2CLKs
2CLKs
5CLKs
5CLKs
4CLKs
7CLKs
7CLKs
6CLKs
2CLKs
2CLKs
2CLKs
6ns
6ns
6ns
2.0ns
2.0ns
2.0ns
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 1.0/Jan. 02
10
HYNIX [ HYNIX SEMICONDUCTOR ]
