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GMS90C51 参数 Datasheet PDF下载

GMS90C51图片预览
型号: GMS90C51
PDF下载: 下载PDF文件 查看货源
内容描述: 8位单芯片微控制器 [8-BIT SINGLE-CHIP MICROCONTROLLERS]
分类和应用: 微控制器
文件页数/大小: 59 页 / 764 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GMS90 Series  
Program Memory Lock Bits  
Lock Bit Protection Modes  
The two-level Program Lock system consists of 2  
Lock bits and a 32-byte (64-byte for GMS97X54/  
56/58) Encryption Array which are used to protect  
the program memory against software piracy.  
Mode LB1 LB2  
Protection Type  
1
2
U
P
U
U
No program lock features  
Further programming of the  
EPROM is disabled  
Encryption Array:  
3
P
P
Same as mode 2, also verify is  
disabled  
Within the EPROM array are 32 bytes (64 bytes  
for GMS97X54/56/58) of Encryption Array that  
are initially unprogrammed (all 1s). Every time  
that a byte is addressed during a verify, address  
U: unprogrammed, P: programmed  
lines are used to select a byte of the Encryption array. This byte is then exclusive-NORed (XNOR) with the code  
byte, creating an Encrypted Verify byte.  
The algorithm, with the array in the unprogrammed state (all 1s), will return the code in its original, unmodified  
form, It is recommended that whenever the Encryption Array is used, at least one of the Lock Bits be pro-  
grammed as well.  
Program / Verify algorithms  
Any algorithm in agreement with the conditions listed in Table 11, and which satisfies the timing specifications  
is suitable.  
Table 11. EPROM programming modes  
EA/  
VPP  
ALE/  
PROG  
MODE  
RST  
PSEN  
P2.7  
P2.6  
P3.7  
P3.6  
Read Signature  
1
1
1
1
1
1
0
0
0
0
0
0
1
0
1
0
0
0
1
0
1
0
1
1
1
0
0
0
0
1
1
0
1
1
1
1
0
0
1
1
0
1
0
VPP  
1
Program Code Data  
Verify Code Data  
VPP  
VPP  
VPP  
Program encryption table  
Program security bit 1  
Program security bit 2  
Notes:  
1. “0” = Valid low for that pin, "1" = valid high for that pin.  
2. VPP = 12.75V ± 0.25V  
3. VCC = 5V ± 10% during programming and verification.  
4. ALE/PROG receives 25 (10 for GMS97X54/56/58) programming pulses while VPP is held at 12.75V.  
Each programming pulse is low for 100us (± 10us) and high for a minimum of 10µs.  
Dec. 1998 Ver 3.0  
49  
 
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