GMS90 Series
HYUNDAI MicroElectronics
AC Characteristics for GMS90 series (33MHz)
External Data Memory Characteristics
Variable Oscillator
1/tCLCL = 3.5 to 33MHz
33 MHz Oscillator
Parameter
Symbol
Unit
Min.
132
132
10
-
Max.
Min.
Max.
tRLRH
tWLWH
tLLAX2
tRLDV
tRHDX
tRHDZ
tLLDV
-
-
6tCLCL-50
-
RD pulse width
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6tCLCL-50
-
WR pulse width
-
tCLCL-20
-
Address hold after ALE
RD to valid data in
81
-
-
5tCLCL-70
0
0
-
Data hold after RD
-
46
153
183
111
-
-
2tCLCL-15
Data float after RD
-
-
8tCLCL-90
ALE to valid data in
Address to valid data in
ALE to WR or RD
tAVDV
tLLWL
tAVWL
tWHLH
tQVWX
tQVWH
tWHQX
tRLAZ
-
-
9tCLCL-90
71
66
10
5
3tCLCL-20
4tCLCL-55
tCLCL-20
tCLCL-25
7tCLCL-70
tCLCL-20
-
3tCLCL+20
-
Address valid to WR or RD
WR or RD high to ALE high
Data valid to WR transition
Data setup before WR
Data hold after WR
Address float after RD
40
-
tCLCL+20
-
-
142
10
-
-
-
-
0
0
Advance Information (33MHz)
External Clock Drive
Variable Oscillator
(Freq. = 3.5 to 24MHz)
Parameter
Symbol
Unit
Min.
Max.
tCLCL
tCHCX
tCLCX
tCLCH
tCHCL
30.3
11.5
11.5
-
285.7
Oscillator period
High time
ns
ns
ns
ns
ns
tCLCL - tCLCX
tCLCL - tCHCX
Low time
5
5
Rise time
-
Fall time
Oct. 2000 Ver 3.1a
39
HYNIX [ HYNIX SEMICONDUCTOR ]
