GMS81C2020/GMS81C2120
Hyundai Micro Electronics
10. ELECTRICAL CHARACTERISTICS
• Absolute Maximum Ratings
Note: Stresses above those listed under "Absolute Max-
imum Ratings" may cause permanent damage to the de-
vice. This is a stress rating only and functional operation
of the device at these of any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect device reliability.
Supply Voltage : VDD . . . . . . . . . . . . . . . - 0.3 to + 7.0V
Storage Temperature : TSTG . . . . . . . . . . -40 to + 125 °C
Voltage on any pin
with respect to Ground ( VSS ) . . . . . . -0.3 to VDD + 0.3V
IOL per I/O Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Recommended Operating Conditions
Specification
Parameter
Symbol
Condition
Unit
Min
4.0
0.4
-40
Max
5.5
VDD
fXI
fXI = 4.5 MHz
VDD = VDD
Supply Voltage
V
Operating Frequency
Operating Temperature
4.5
MHz
°C
TOPR
125
10.1 A/D Converter Characteristics
(TA=25°C, VDD=5V, VSS=0V, AVDD=5.12V, AVSS=0V @fXI =4MHz)
Specifications
Parameter
Symbol
Condition
Unit
Min.
Typ.
Max.
AVDD
VAN
AVDD
AVSS
Analog Power Supply Input Voltage Range
Analog Input Voltage Range
-
V
V
AVSS
-0.3
AVDD+0.3
Current Following
Between AVDD and AVSS
IAVDD
-
−
200
uA
CAIN
NNLE
Overall Accuracy
Non-Linearity Error
Differential Non-Linearity Error
Zero Offset Error
Full Scale Error
-
-
-
-
-
-
-
±1.0
±1.0
±1.0
±0.5
±0.25
±1.0
-
±1.5
±1.5
±1.5
±1.5
±0.5
±1.5
20
LSB
LSB
LSB
LSB
LSB
LSB
us
NDNLE
NZOE
NFSE
NNLE
Gain Error
TCONV
fXI=4MHz
Conversion Time
20
preliminary
Nov. 1999 Ver 0.0
HYNIX [ HYNIX SEMICONDUCTOR ]
