GMS81C5108
7.8 Typical Characteristics
These graphs and tables are for design guidance only and
are not tested or guaranteed.
The data is a statistical summary of data collected on units
from different lots over a period of time. “Typical” repre-
sents the mean of the distribution while “max” or “min”
represents (mean + 3σ) and (mean − 3σ) respectively
where σ is standard deviation
In some graphs or tables, the datas presented are out-
side specified operating range (e.g. outside specified
V
DD range). This is for information only and devices
are guaranteed to operate properly only within the
specified range.
I
OH−VOH, VDD=4.2V
I
OL−VOL, VDD=4.2V
I
OL
I
OH
R−Ta
(mA)
40
°
-20 C
R0,R1,R2,R3 pin
(mA)
-16
-20°C
25°C
R
25°C
(kΩ)
70°C
-14
-12
-10
-8
70°C
200
100
0
30
20
10
V
=4.0V
DD
-6
-4
Ta
(°C)
-2
0
-25
0
25
50
75
V
V
OL
(V)
OH
1.0
2.0
3.0
4.0 (V)
1.0
2.0
3.0
4.0
V
DD−VIH2
V
DD−VIH1
R−Ta
RESET pin
R0~R3 pin
RESET,X ,INT0~INT2,EC0.SI.SCK
IN
R
V
V
IH2
IH1
(kΩ)
f
=4MHz
MAIN
f =4MHz
MAIN
(V)
(V)
Ta=25°C
Ta=25°C
100
50
0
4
4
3
2
3
2
V
=4.0V
DD
1
0
1
0
Ta
(°C)
V
(V)
V
DD
(V)
4
DD
-25
0
25 50 75
2
2.5
4
2
2.5
3
3.5
3
3.5
V
DD−VIL2
V
DD−VIL1
RESET,X ,INT0~INT2,EC0.SI.SCK
R0~R3 pin
IN
V
V
IL1
IL1
f
=4MHz
f
=4MHz
MAIN
MAIN
(V)
(V)
Ta=25°C
Ta=25°C
2
2
1
0
1
0
V
V
DD
DD
(V)
4
(V)
2
2.5
2
2.5
4
3
3.5
3
3.5
16
JUNE 2001 Ver 1.0
HYNIX [ HYNIX SEMICONDUCTOR ]
