HYUNDAI Micro Electronics
GMS800 Series
Register / Memory Operation
Op
Byte
No
Cycle
No
Flag
NVGBHIZC
No.
Mnemonic
Operation
Code
C4
C5
C6
C7
D5
D6
D7
D4
DB
E4
1E
CC
CD
DC
3E
C9
D9
D8
E5
E6
E7
F5
1
LDA #imm
2
2
2
3
3
2
2
1
1
3
2
2
2
3
2
2
2
3
2
2
3
3
2
2
1
1
2
2
3
2
2
3
1
1
1
1
1
1
1
1
2
2
1
1
2
3
4
4
5
6
6
3
4
5
2
3
4
4
2
3
4
4
4
5
5
6
7
7
4
4
4
5
5
4
5
5
2
2
2
2
2
2
4
4
5
6
5
4
Load accumulator
( M )
2
LDA dp
A
←
3
LDA dp + X
LDA !abs
LDA !abs + Y
LDA [ dp + X ]
LDA [ dp ] + Y
LDA { X }
LDA { X }+
LDM dp,#imm
LDX #imm
LDX dp
4
5
N-----Z-
6
7
8
9
X- register auto-increment : A
( M ) , X
X + 1
imm
←
←
←
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Load memory with immediate data : ( M )
Load X-register
--------
N-----Z-
X
( M )
←
LDX dp + Y
LDX !abs
LDY #imm
LDY dp
Load Y-register
( M )
Y
←
N-----Z-
--------
LDY dp + X
LDY !abs
STA dp
Store accumulator contents in memory
( M )
STA dp + X
STA !abs
STA !abs + Y
STA [ dp + X ]
STA [ dp ] + Y
STA { X }
STA { X }+
STX dp
A
←
F6
F7
F4
FB
EC
ED
FC
E9
F9
X- register auto-increment : ( M )
A, X
X + 1
←
←
Store X-register contents in memory
( M )
STX dp + Y
STX !abs
STY dp
X
←
--------
--------
Store Y-register contents in memory
( M )
STY dp + X
STY !abs
TAX
Y
←
F8
E8
9F
Transfer accumulator contents to X-register : X
Transfer accumulator contents to Y-register : Y
Transfer stack-pointer contents to X-register : X
A
←
N-----Z-
N-----Z-
N-----Z-
N-----Z-
N-----Z-
N-----Z-
--------
--------
TAY
A
←
TSPX
AE
C8
8E
BF
EE
DE
BC
AD
BB
FE
sp
←
TXA
Transfer X-register contents to accumulator: A
X
←
TXSP
Transfer X-register contents to stack-pointer: sp
Transfer Y-register contents to accumulator: A
X
←
TYA
Y
←
XAX
Exchange X-register contents with accumulator :X
Exchange Y-register contents with accumulator :Y
Exchange memory contents with accumulator
A
A
↔
↔
XAY
XMA dp
XMA dp+X
XMA {X}
XYX
( M )
A
↔
N-----Z-
--------
Exchange X-register contents with Y-register : X
Y
↔
MAR. 2000
vii
HYNIX [ HYNIX SEMICONDUCTOR ]
