HYUNDAI MicroElectronics
GMS82512/16/24
Specifications
Max.
Parameter
Symbol
Unit
Typ.1
Min.
fXIN=4MHz fXIN=8MHz
AVDD
0.9VDD
VDD
1.1VDD
Analog Power Supply Input Range
V
1. Data in “Typ” column is at 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
7.4 DC Electrical Characteristics
(TA=-20~85°C, VDD=2.7~5.5V, Ta= -20~85°C, fXIN=8MHz, VSS=0V),
Specifications
Parameter
Symbol
Condition
Unit
Typ.1
Min.
Max.
XIN, RESET,
R4, R5, R6
VIH1
VIH2
VIL1
VIL2
0.8VDD
0.7VDD
VDD+0.3
-
-
-
-
V
VDD=4.5
VDD=2.7
Input High Voltage
VDD+0.3
R0, R2, R3
XIN, RESET,
R4, R5, R6
0.2VDD
0.3VDD
V
V
VDD=4.5
VDD=2.7
Input Low Voltage
R0, R2, R3
VDD=4.5
VDD=2.7
IOH1=-2mA
R0,R2,R3,R4,R5
R6
VOH
VDD-1.0
Output High Voltage
Output Low Voltage
-
-
-
VDD=4.5
VDD=2.7
IOL1=5mA
R0,R2,R3,R4,R5
R6
VOL
-
1.0
V
V
VPFD=3.0V
VPFD=2.4V
Power Fail Detect
Voltage
VPFD
@ TA=25°C
0.9VPFD
1.1VPFD
Input High
Leakage Current
IIH1
IIL
VIN=VDD
VIN=VSS
All input pins
All input pins
-5.0
-5.0
-
-
5.0
5.0
0.8
µA
µA
V
Input Low
Leakage Current
RESET, EC0, SIN,
SCLK, INT0~INT3
VT+, VT-
Hysteresis
0.3
-
IDD1
IDD2
f
f
=8MHz
=4MHz
All input = V
SS
8
4
1
20
10
10
mA
mA
µA
XIN
XIN
Crystal Oscillator,
Power Current
C
=C =30pF@ 8M Hz
L1
L2
ISTOP
All input = V
SS
-
1. Data in “Typ.” column is at 4.5V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
FEB. 2000 Ver 1.00
11
HYNIX [ HYNIX SEMICONDUCTOR ]
