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GMS30012-XXXDT 参数 Datasheet PDF下载

GMS30012-XXXDT图片预览
型号: GMS30012-XXXDT
PDF下载: 下载PDF文件 查看货源
内容描述: [Microcontroller, 4-Bit, MROM, 1MHz, CMOS, PDSO20, SOP-20]
分类和应用: 时钟微控制器光电二极管外围集成电路
文件页数/大小: 158 页 / 972 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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Chapter 2. Architecture  
CHAPTER 2. Architecture  
BLOCK DESCRIPTION  
Characteristics  
The GMS300 series can incorporate maximum 1024 words (64 words 16  
pages 8bits) for program memory. Program counter PC (A0~A5) and page  
address register (A6~A9) are used to address the whole area of program memory  
having an instruction (8bits) to be next executed.  
The program memory consists of 64 words on each page, and thus each page  
can hold up to 64 steps of instructions.  
The program memory is composed as shown below.  
Program capacity (pages)  
0
1
2
3
4
8
5
6
7
Page 0  
Page 1  
Page 2  
Page 15  
63  
0
1
2
15  
A0~A5  
A6~A9  
Program counter (PC)  
6
Page address register (PA)  
Page buffer (PB)  
4
Stack register  
(Level 1 )  
(Level 2 )  
(Level 3 )  
(SR)  
(PRS)  
Fig 2-1 Configuration of Program Memory  
2 - 1  
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