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GM76C256CE 参数 Datasheet PDF下载

GM76C256CE图片预览
型号: GM76C256CE
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8位的5.0V低功耗CMOS SRAM慢 [32K x8 bit 5.0V Low Power CMOS slow SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 177 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM76C256C Series
DC CHARACTERISTICS
Vcc = 5V
±10%,
T
A
= 0°C to 70°C (Normal)/-25°C to 85°C (Extended), unless otherwise specified.
Parameter
Test Condition
Min. Typ. Max.
Symbol
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
-1
-
1
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
/CS = V
IL
, V
IN
= V
IH
or V
IL,
-
-
10
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating Current
/CS = V
IL,
V
IN
= V
IH
or V
IL,
-
-
70
Min. Duty Cycle = 100%, I
I/O =
0mA
I
SB
TTL Standby Current
/CS= V
IH
-
-
1
(TTL Inputs)
V
IN
= V
IH
or V
IL
I
SB1
CMOS Standby Current
/CS > Vcc - 0.2V,
L
-
-
40
(CMOS Inputs)
V
IN
> Vcc - 0.2V or
LL
-
-
20
V
IN
< Vss + 0.2V
LE
-
-
60
LLE
-
-
30
V
OL
Output Low Voltage
I
OL
= 2.1mA
-
-
0.4
V
OH
Output High Voltage
I
OH =
-1.0mA
2.4
-
-
Note : Typical values are at Vcc =5.0V, T
A
= 25°C
Unit
uA
uA
mA
mA
mA
uA
uA
uA
uA
V
V
AC CHARACTERISTICS(I)
Vcc = 5V
±10%,
T
A
= 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.
-55
-70
-85
# Symbol
Parameter
Min.
Max. Min.
Max. Min
Max.
READ CYCLE
1
tRC
Read Cycle Time
55
-
70
-
85
-
2
tAA
Address Access Time
-
55
-
70
-
85
3
tACS
Chip Select Access Time
-
55
-
70
-
85
4
tOE
Output Enable to Output Valid
-
30
-
35
-
45
5
tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
7
tCHZ
Chip Disable to Output in High Z
0
20
0
30
0
30
8
tOHZ
Out Disable to Output in High Z
0
20
0
30
0
30
9
tOH
Output Hold from Address Change
5
-
5
-
5
-
WRITE CYCLE
10 tWC
Write Cycle Time
55
-
70
-
85
-
11 tCW
Chip Selection to End of Write
50
-
65
-
75
-
12 tAW
Address Valid to End of Write
50
-
65
-
75
-
13 tAS
Address Set-up Time
0
-
0
-
0
-
14 tWP
Write Pulse Width
40
-
50
-
60
-
15 tWR
Write Recovery Time
0
-
0
-
0
-
16 tWHZ
Write to Output in High Z
0
20
0
25
0
30
17 tDW
Data to Write Time Overlap
25
-
30
-
40
-
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
19 tOW
Output Active from End of Write
5
-
5
-
5
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev 03 / Apr. 2000
3