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GM72V66841GT-S 参数 Datasheet PDF下载

GM72V66841GT-S图片预览
型号: GM72V66841GT-S
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 11 页 / 49 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM72V66841G  
COMMAND TRUTH TABLE  
A10/  
AP  
ADDR  
Command  
CKEn-1  
CKEn  
CS  
RAS  
CAS  
WE  
DQM  
BA  
Note  
Mode Register Set  
H
H
H
H
X
L
H
L
L
X
H
L
L
X
H
H
L
X
H
H
X
OP code  
No Operation  
X
X
X
X
X
X
X
Bank Active  
L
RA  
V
V
Read  
L
H
L
L
L
H
H
L
L
L
H
L
CA  
CA  
X
Read with Autoprecharge  
Write  
H
H
X
X
X
V
Write with Autoprecharge  
Precharge All Banks  
Precharge selected Bank  
Burst Stop  
H
H
L
X
V
X
X
L
L
H
H
L
L
H
H
H
H
H
X
L
X
V
X
X
X
X
X
DQM  
Auto Refresh  
Entry  
H
L
L
L
L
L
H
H
X
H
X
H
X
H
X
V
L
Self Refresh1  
Exit  
H
L
X
H
X
H
X
H
X
V
X
H
X
H
X
H
X
V
X
X
X
L
H
L
H
L
X
X
X
H
L
Entry  
Precharge  
power down  
H
L
Exit  
H
H
L
Entry  
Clock  
Suspend  
H
L
L
X
X
Exit  
H
X
Note :  
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high  
2. X = Don¢t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,  
Opcode = Operand Code, NOP = No Operation  
Rev. 0.2/Oct.00  
10