GM71V17403C
GM71VS17403CL
DC Electrical Characteristics (VCC = 3.3V+/-0.3V, VSS = 0V, TA = 0 ~ 70C)
Symbol
Parameter
Min Max Unit Note
Output Level
Output "H" Level Voltage (IOUT = -2mA)
V
OH
2.4
0
V
CC
V
V
V
OL
Output Level
Output "L" Level Voltage (IOUT = 2mA)
0.4
50ns
60ns
70ns
-
-
100
90
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling : tRC = tRC min)
I
CC1
mA
mA
mA
1, 2
-
80
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)
I
I
CC2
CC3
-
2
50ns
60ns
70ns
50ns
60ns
-
-
-
-
-
100
90
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
2
80
90
EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
I
CC4
mA
1, 3
80
(tHPC = tHPC min)
-
-
-
70ns
75
1
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)
I
I
CC5
CC6
mA
uA
100
5
CAS-before-RAS Refresh Current
(tRC = tRC min)
50ns
60ns
70ns
-
-
-
100
90
mA
80
I
I
I
CC7
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, tRC = 31.3us, tRAS <= 0.3us,
4,5
-
-
300
5
uA
D
OUT = High-Z, CMOS interface)
CC8
CC9
Standby Current RAS = VIH
CAS = VIL
mA
1
5
D
OUT = Enable
Self-Refresh Mode Current
(RAS, CAS<=0.2V, DOUT=High-Z, CMOS interface)
-
200
10
uA
uA
uA
I
L(I)
Input Leakage Current
Any Input (0V<=VIN<= 4.6V)
-10
-10
I
L(O)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 4.6V)
10
Note: 1. ICC depends on output load condition when the device is selected.
CC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL
I
.
3. Address can be changed once or less while CAS = VIH
4. CAS = L (<=0.2) while RAS = L (<=0.2).
5. L - Version.
.
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
