GM71C(S)17400C/CL
DC Electrical Characteristics (VCC = 5.0V+/-10%, Vss = 0V, TA = 0 ~ 70C)
Symbol
Parameter
Min Max Unit Note
Output Level
Output "H" Level Voltage (IOUT = -5mA)
V
OH
2.4
0
V
CC
V
V
Output Level
Output "L" Level Voltage (IOUT = 4.2mA)
V
OL
0.4
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling : tRC = tRC min)
50ns
60ns
-
-
100
90
I
CC1
mA
mA
mA
1, 2
-
70ns
80
I
I
CC2
CC3
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)
-
2
50ns
60ns
-
-
100
90
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
2
-
70ns
50ns
60ns
80
90
80
I
CC4
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
-
-
mA
1, 3
(tPC = tPC min)
-
-
-
70ns
70
1
I
CC5
CC6
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)
mA
uA
150
4
I
CAS-before-RAS Refresh Current
(tRC = tRC min)
50ns
60ns
70ns
-
-
-
100
90
mA
uA
80
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, tRC=62.5us, tRAS<=0.3us,
I
CC7
CC8
-
-
350
5
4
1
D
OUT=High-Z, CMOS interface)
Standby Current RAS = VIH
CAS = VIL
mA
I
D
OUT = Enable
I
L(I)
Input Leakage Current
Any Input (0V<=VIN<= 6V)
-10
-10
10
10
uA
uA
IL(O)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 6V)
Note: 1. ICC depends on output load condition when the device is selected.
CC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL
I
.
3. Address can be changed once or less while CAS = VIH
.
4. L-version.
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
