GM71C18163C
GM71CS18163CL
EDO Page Mode Cycle
GM71C(S)18163 GM71C(S)18163 GM71C(S)18163
C/CL-5 C/CL-6 C/CL-7
Unit
Note
Symbol
Parameter
Min Max Min Max Min Max
t
HPC
EDO Page Mode Cycle Time
20
-
-
25
-
-
30
-
-
ns
ns
ns
ns
ns
25
16
100,000
100,000
100,000
EDO Page Mode RAS Pulse Width
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
tRASP
-
30
-
-
35
-
-
40
-
9,17,22
tACP
30
35
40
tRHCP
9
tDOH
Output data Hold Time from CAS low
3
7
-
-
3
-
-
3
10
13
ns
ns
ns
CAS Hold Time referred OE
CAS to OE Setup Time
t
COL
-
-
-
-
t
COP
5
5
5
Read command Hold Time
from CAS Precharge
30
35
t
RCHP
40
EDO Page Mode Read-Modify-Write Cycle
GM71C(S)18163 GM71C(S)18163 GM71C(S)18163
C/CL-5 C/CL-6 C/CL-7
Unit Note
Symbol
Parameter
Min Max Min Max Min Max
t
HPRWC
EDO Page Mode Read-Modify-Write
Cycle Time
57
45
-
-
68
54
-
-
79
62
-
-
ns
ns
14,22
tCPW
WE Delay Time from CAS Precharge
Refresh
GM71C(S)18163 GM71C(S)18163 GM71C(S)18163
C/CL-5 C/CL-6 C/CL-7
Unit
Note
Symbol
Parameter
Min Max Min Max Min Max
1024
cycles
-
-
-
-
t
REF
Refresh period
16
16
16
ms
ms
1024
cycles
t
REF
Refresh period (L -Series)
-
128
-
128
128
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
