LL4148
SMALL SIGNAL
SWITCHING DIODE
FEATURES
●
Silicon epitaxial planar diode
●
High speed switching diode
●
500mW power dissipation
REVERSE VOLTAGE
- 75
Volts
FORWARD CURRENT
- 0.15Amperes
DL - 35
.063(1.6)
.055(1.4)
.020(0.5)
.012(0.3)
.020(0.5)
.012(0.3)
MECHANICAL DATA
●Case:
Mini-MELF glass case
●
Polarity: Color band denotes cathode
●
Weight : Approx.0.05 grams
.146(3.7)
.130(3.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
LL4148
Reverse Vltage
Peak Reverse Voltage
Average Forward Rectified Current
Half Wave Rectification with Resist .load
at T
amb
=25℃ and f≧50H
Z
Forward Surge Current at t＜1s and T
J
=25℃
Power Dissipation at Tamb=25℃
Junction Temperature
Storage Temperature Range
I
FSM
P
tot
T
J
T
STG
I
O
V
R
V
RM
UNIT
V
V
75
100
150
500
500
(1)
175
﹣65
to﹢175
mA
mA
mW
℃
℃
NOTE:(1) Valid provided that electrodes are kept at ambient temperature .
ELECTRICAL CHARACTERISTICS
MIN
Forward Voltage at I
F=
10mA
Leakage Current
at V
R
=20V
at V
R
=75V
at V
R
=20V T
J=
150℃
Capacitance at V
F
=V
R
=0V
Voltage Rise When Switching ON
Tested With 50mA Pulses
tp=0.1us.Rise Time<30ns.fp=5to 100H
Z
Reverse Recovery Time From IF=10mA
V
R
=6V. RL=100Ω at I
R
=1mA
Thermal Resistance Junction to Ambient
Rectification Effciency at 100MHZ V
RF
=2V
R
θJA
TYP
﹣
﹣
﹣
﹣
﹣
-
MAX
1
25
5
50
4
2.5
UNIT
V
uA
uA
uA
pF
v
VF
I
R
I
R
I
R
C
tot
﹣
-
﹣
﹣
﹣
﹣
V
fr
t
rr
﹣
﹣
0.45
﹣
﹣
﹣
4
350
(1)
﹣
ns
K/W
﹣
ηV
NOTE:(1)Valid provided that electrodes are kept at ambient temperature.
~ 416 ~
HY [ HY ELECTRONIC CORP. ]
