HWL34YRF
L-Band GaAs Power FET
Autumn 2002 V1
Features
•
•
•
•
Low Cost GaAs Power FET
Class A or Class AB Operation
Greater than 14.5 dB Gain
5V to 10V Operation
Description
The HWL34YRF is a Power GaAs FET designed for
various L-band & S-band applications.
presently offered in low cost ceramic package.
It is
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
6mA
175
°
C
-65 to +175
°
C
12W
RF Package (Ceramic)
Outline Dimensions
mounted on an infinite heat sink.
Electrical Specifications
(T
A
=25
°
C) f = 2400 MHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Pinch-off Voltage at V
DS
=3V, I
D
=60mA
Transconductance at V
DS
=3V, I
D
=600mA
Thermal Resistance, Channel to case*
Power Output at Test Points
V
DS
=10V, I
D
=0.5I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5I
DSS
Power-Added Efficiency (P
out
= P
1dB
)
V
DS
=10V, I
D
=0.5I
DSS
Units
mA
V
mS
°
C/W
dBm
dB
%
Min.
900
-3.5
-
-
33
13.5
35
Typ.
1200
-2.0
700
9
34
14.5
45
Max.
1600
-1.5
-
12
-
-
-
g
m
R
th
P
1dB
G
1dB
PAE
* Device mounted on an infinite heat sink.
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
