HWL30YRF
L-Band GaAs Power FET
Autumn 2002 V1
Features
•
•
•
•
Low Cost GaAs Power FET
Class A or Class AB Operation
Typical 16.5 dB Gain
5V to 10V Operation
Outline Dimensions
Description
The HWL30YRF is a Medium Power GaAs FET
designed for various L-band & S-band
applications. It is presently offered in low cost
ceramic package.
RF Package (Ceramic)
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
3 mA
175°C
-65 to +175°C
6W
* mounted on an infinite heat sink.
Electrical Specifications
(TA=25°C) f = 2400 MHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=5V, V
GS
=0V
Pinch-off Voltage at V
DS
=5V, I
D
=30mA
Transconductance at V
DS
=5V, I
D
=300mA
Thermal Resistance
Power Output at Test Points
V
DS
=10V, I
D
=0.5I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
= I
D
=0.5I
DSS
Units
mA
V
mS
°C/W
dBm
dB
%
Min.
500
-3.5
-
-
30
15
35
Typ.
600
-2.0
300
15
31
16.5
45
Max.
900
-1.5
-
25
-
-
-
g
m
R
th
P
1dB
G
1dB
PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
