HWF1682RA
L-Band GaAs Power FET
January 2006
V4
Outline Dimensions
Features
•
High Output Power:
P
1dB
=37 dBm (typ.)
•
High Gain:
G
L
=11.5 dB (typ.)
•
High Efficiency:
PAE =45% (typ.)
•
•
High Linearity:
IP
3
=48 dBm(typ.)
Class A or Class AB Operation
•
Low Cost
Description
The HWF1682RA is a high power GaAs
MESFET designed for various RF and
Microwave applications.
It is presently offered in a low cost,
surface-mountable ceramic package.
Absolute Maximum Ratings
V
DS
[1]
RA Package (Ceramic)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
10 mA
175
°
C
-65 to +175
°
C
15 W
V
GS
I
D
I
G
T
CH
T
STG
P
T
[1]
[2]
Hexawave recommends that the quiescent
drain-source operating voltage (V
DS
) should not
exceed 10 Volts.
Mounted on an infinite heat sink.
[2]
Electrical Specification at 25
°
C
Symbol
I
DSS
V
P
Parameters
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
Output Power @1dB Gain
Linear Power Gain
Power-added Efficiency (P
out
= P
1dB
)
Third-order Intercept Point
[3]
Conditions
V
DS
=3V, V
GS
=0V
V
DS
=3V, I
DS
=100 mA
V
DS
=3V, I
DS
=1000 mA
Channel to Case
V
DS
=10V
I
DS
=0.5I
DSS
f=2.4 GHz
Units
mA
V
mS
°
C/W
dBm
dB
%
dBm
Min.
1500
-3.5
-
-
36.0
10.5
-
-
Typ.
2000
-2.0
1000
7
37.0
11.5
40
48
Max.
2600
-1.5
-
10
-
-
-
-
g
m
R
th
P
1dB
G
L
PAE
IP
3
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP
3
Hexawave Inc.
2 Prosperity Road II, Science Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
