HWC27YC
C-Band Power FET Via Hole Chip
Autumn 2002
V1
Features
•
•
•
•
Outline Dimensions
650
Low Cost GaAs Power FET
Class A or Class AB Operation
18 dB Typical Gain at 2.4GHz
5V to 10V Operation
Source
435
1
3
Description
The HWC27YC is a medium power GaAs FET
designed for various RF and microwave
applications.
215
2
4
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
Source
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
2mA
175
°
C
-65 to +175
°
C
3.5W
0.0
0.0 58.5
344.5 400
Unit:
µm
Thickness: 50
±
5
Chip size
±
50
Bond Pads 1-2 (Gate):
Bond Pads 3-4 (Drain):
60 x 60
60 x 60
* mounted on an infinite heat sink
Electrical Specifications
(T
A
=25
°
C) f = 2.4 GHz for all RF Tests
Symbol
I
DSS
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Units
mA
Min.
300
Typ.
400
Max.
600
V
P
Pinch-off Voltage at V
DS
=3V, I
D
=20mA
V
-3.5
-2.0
-1.5
g
m
P
1dB
Transconductance at V
DS
=3V, I
D
=200mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
mS
-
250
-
dBm
27
28
-
G
1dB
dB
16
17
-
PAE
%
-
40
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
