HVV1214-100 High Voltage, High Ruggedness
The innovative Semiconductor Company!
L-Band Radar Pulsed
Voltage, High Ruggedness
HVV1214-100 High
Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty
L-Band Radar Pulsed Power
HVV1214-100 HigH Voltage, HigH Ruggedness
Transistor
For Ground Based Radar Applications
1200-1400 MHz, 200µs Pulse, 10%
Radar Pulsed Power Transistor
L-Band
Duty
For Ground Based Radar Applications
MHz, 200μs Pulse, 10% Duty
1200-1400
TM
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
eleCtRiCal CHaRaCteRistiCs
�½
Parameter
Drain-Source Breakdown
Drain Leakage Current
Gate Leakage Current
�½
Power Gain
Input Return Loss
�½
Drain Efficiency
Gate Quiescent Voltage
Threshold Voltage
For Ground Based Radar Applications
Conditions
Min
VGS=0V,ID=5mA
95
VGS=0V,VDS=50V
-
VGS=5V,VDS=0V
-
F=1400MHz
18
F=1400MHz
-
F=1400MHz
43
VDD=50V,IDQ=100mA
1.1
VDD=5V, ID=300µA
0.7
�½
Typical
�½
Max
-
102
50
200
1
5
20
-
-8
-5
45
-
1.45
1.8
1.2
1.7
Unit
V
µA
µA
dB
dB
%
V
V
TheThe innovative Semiconductor Company!
innovative Semiconductor Company!
�½
Symbol
V
BR(DSS)
I
DSS
I
GSS
G
P1
IRL
1
η
D1
VGS(Q)
2
VTH
PULSE
�½
Symbol Parameter
Conditions
�½
1
Rise Time
F=1400MHz
T
r
1
Fall Time
F=1400MHz
T
f
PD
1
Pulse Droop
F=1400MHz
THERMAL PERFORMANCE
CHARACTERISTICS
PULSE
CHaRaCteRistiCs
Pulse
CHARACTERISTICS
�½
Min
Typical
Max
�½
-
<25
50
-
<15
50
-
0.35
0.5
Unit
nS
nS
dB
THERMAL
PeRFoRManCe
tHeRMal
PERFORMANCE
�½
�½
RUGGEDNESS PERFORMANCE
at rated output power and nominal operating voltage across the frequency band of operation.
�½
1
NOTE: : All parameters measured under pulsed conditions at 120W output power measured at the
�½
pulsed conditions at 120W output power
in a
1.) NOTE: All parameters measured under
5% point of the pulse with pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA
�½
The HVV1214-100 device is capable of withstanding
output load mismatch corresponding to a
an
20:1 VSWR
�½
RUGGEDNESS PERFORMANCE
Ruggedness PeRFoRManCe
measured at the
test fixture.
the pulse with pulse
of
broadband matched
5% pointmeasured under pulsed width = 200µsec, duty cycle = 10%
1.) NOTE: All parameters
conditions at 120W output power
2
and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
NOTE: Amount of gate voltage
of the pulse with
nominal
width = 200µsec, duty cycle = 10%
measured at the 5% point
required to attain
pulse
quiescent current.
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
ISO 9001:2000 Certified
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884)
visit www.hvvi.com
Tel: (866) 429-HVVi (4884) or
or visit
www.hvvi.com
Certified
© 2008 HVVi
ISO 9001:2000
Inc. All
All Rights Reserved.
Semiconductors,
© 2008
(866)
Semiconductors,
or
Inc.
Rights Reserved.
HVVi
429-HVVi (4884) visit
www.hvvi.com
Tel:
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A
EG-01-DS06A
12/12/08
12/11/08
EG-01-DS06A
2
2
12/12/08
2
HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
10235 S. 51
st
St. Suite 100
10235 S. 51st St. Suite 100
HVVi Semiconductors, Inc.
Phoenix, Az. 85044
Phoenix, AZ. 85044
10235 S. 51
st
St. Suite 100
Phoenix, Az. 85044
HVVI [ HVVI SEMICONDUCTORS, INC. ]
