L-Band Radar Pulsed Power Transistor
PACKAGE
PACKAGE
1200-1400 MHz, 200μs Pulse, 10% Duty
The
DESCRIPTION
HVV1214-075 device is a high
high power HVV1214-075 device is a high
The high power
voltage silicon enhancement mode RF transistor
PACKAGE
voltage silicon enhancement mode RF
for Ground Based Radar Applications
transistor
designed for L-Band pulsed radar applications
designed for L-Band pulsed radar applications
DESCRIPTION
The high power HVV1214-075 device is a high
operating over over the frequency range from
the
operating
voltage silicon enhancement mode RF transistor
DESCRIPTION
frequency range from
1.2GHz to 1.4GHz.
1.2GHz to
L-Band
designed for
1.4GHz.
pulsed radar applications
The high power HVV1214-075 device is a high
operating over
HVV1214-075 device
range from
the frequency
is high voltage
voltage
power
The high
silicon enhancement mode RF
a
transistor
1.2GHz to 1.4GHz.
FEATURES
L-Band
mode RF transistor designed for
designed for
FEATURES
silicon enhancement
pulsed radar applications
operating over the frequency range from
L-Band pulsed radar applications operating over the
1.2GHz to 1.4GHz.
FEATURES
from 1.2GHz
High High Gain
Power
frequency range
Power Gain
to 1.4GHz.
Excellent Ruggedness
Excellent Ruggedness
48V Supply
Gain
FEATURES
Voltage
High Power
48V Supply Voltage
FEaTURES
Excellent Ruggedness
48V Supply
Gain
High
MAXIMUM
ABSOLUTE
Power
Voltage
RATINGS
• High Power Gain
ABSOLUTE
Ruggedness
RATINGS
MAXIMUM
Excellent
• Excellent Ruggedness
48V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
• 48V Supply Voltage
Symbol Parameter
Value
Symbol Parameter
ValueUnit Unit
V
ABSOLUTE MAXIMUM
Voltage 105 V
Drain-Source Voltage 105
DSS
V
Drain-Source
RATINGS
V
DSS
V
GS
aBSOLUTE MaXIMUM
10 10 V
Symbol
Gate-Source Voltage
Parameter
Value
Unit
V
RaTINGS
V
GS
Gate-Source Voltage
I
DSX
I
Drain Current
Voltage
8
105
8
A
V
DSS
Drain-Source
V
A
Drain Current
DSX
2
Symbol
Gate-Source Voltage
250
Parameter
Value
Unit
V
P
D
V
GS
P
2
Power Dissipation
Power Dissipation
10
250 W W
D
V
DSS
Drain-Source Voltage
-65 to
105
V
95
Drain
Temperature
8
T
S
I
DSX
Storage
Current
°C
T
Storage Temperature -65 to
A
°C
2
V
GS
S
Gate-Source Voltage
+200
10
P
D
Power Dissipation
250
+200
V
W
I
S
Drain Current
8
to
°C
A
DSX
Storage
-65
T
J
T
T
Junction
Temperature
200 200
°C
°C
Junction
P
D2
J
Power Dissipation
250
W
+200
Temperature
Temperature
T
Storage
-65
°C
T
J
S
Junction
Temperature
200
to
+200
Temperature
T
J
Junction
200
°C
Temperature
DESCRIPTION
DESCRIPTION
HVV1214-075
HVV1214-075
L-Band Radar Pulsed Power Transistor
L-Band Radar Pulsed Power Transistor
HVV1214-075
MHz, 200µs Pulse, 10% Duty
1200-1400 MHz, 200µs Pulse, 10% Duty
1200-1400
The innovative Semiconductor Company!
Pulsed Power Transistor
L-Band Radar
HVV1214-075
200µs Pulse, 10% Duty
1200-1400 MHz,
HVV1214-075 PRODUCT OVERVIEW
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty
TM
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
Pr
eli
m
THERMAL CHARACTERISTICS
THERMAL CHARACTERISTICS
THERMaL CHaRaCTERISTICS
Unit Unit
THERMAL
Parameter
Symbol Parameter
Max Max
Symbol
CHARACTERISTICS
JC
1
1
Thermal Resistance
0.70
°C/W
JC
THERMAL
Thermal Resistance
Max
0.70
Unit
°C/W
CHARACTERISTICS
Symbol Parameter
1
Thermal Resistance
0.70
°C/W
JC
Symbol Parameter
Max
Unit
1
ELECTRICAL CHARACTERISTICS
°C/W
Thermal Resistance
0.70
JC
ELECTRICAL CHARACTERISTICS
in
Symbol
LMT
1
ar
Tolerance
OUT
Parameter
Test Condition
Mismatch
F = 1400MHz
Load
Tolerance
P
OUT
= 75W
Mismatch
F = 1400MHz
Tolerance
Max
20:1
The device resides in a two-lead metal flanged
The device resides in a two-lead metal flanged
package with with liquid crystal polymer lid. The
crystal
package liquid
two-lead
polymer lid. The
The
HV400 package
in a
in
is
two-lead metal flanged
device resides
style
a
qualified for gross leak
metal flanged package
The
HV400
resides
style is qualified for gross leak
device
package
with
package with
polymer lid. The HV400
lid.
Test
style
liquid crystal
liquid crystal
Method
package
test test – MIL-STD-750D,
polymer
1071.6, Test
– MIL-STD-750D, Method 1071.6,
The
Condition C. C.
leak test – MIL-STD-750D,
leak
HV400
for gross
qualified for gross
Method
The device resides in
is qualified
package style
a
is
two-lead metal flanged
Condition
test –
with liquid
package
MIL-STD-750D, Method 1071.6, Test
1071.6, Test Condition C.
crystal polymer lid. The
HV400 package style is qualified for gross leak
Condition C.
RUGGEDNESS
Method 1071.6, Test
test –
RUGGEDNESS
MIL-STD-750D,
Condition C.
RUGGEDNESS
RUGGEDNESS
device is
The The HVV1214-075 device capable of of
HVV1214-075
capable
The
withstanding
device
output load
withstanding an
HVV1214-075
an
is capable of
ismismatch
withstanding an output load mismatch
RUGGEDNESS
output load mismatch
a to
device
VSWR
20:1
phase
over
a
all
The
corresponding 20:120:1
is
to
capable
all
of
HVV1214-075
a VSWR
corresponding to
corresponding
over over
VSWR
phase
withstanding an
output power and
mismatch
output
power and operating
load
angles and rated
operating
all phase
angles and
rated output
power and operating
angles and
rated output
The HVV1214-075
20:1
frequency band
of
is capable
corresponding
across
device
frequency
phase
to
voltage
voltage
frequency
VSWR over all
band
voltage across
across
a
the the
load mismatch
of of
the
an output
withstanding
rated output
band of operation.
angles and
power and operating
operation.
operation.
corresponding to a
the
VSWR over all phase
20:1
frequency band of
voltage across
Test Condition
Symbol Parameter
Max MaxUnits Units
Symbol
angles and
Parameter Test Condition
operating
power and
operation.
rated output
75W
LMT
1
LMT
1
Load Load
P
OUT
=
20:1 20:1
VSWR
VSWR
OUT
= 75W
voltage across the
P
frequency band of
Symbol
Mismatch
Parameter
Test Condition
Max
Units
Mismatch = 1400MHz
F
operation.
F = 1400MHz
20:1
Tolerance
LMT
1
Load
P
= 75W
VSWR
Units
VSWR
Typ Typ Units
Units
110 110 V
BR(DSS)
Symbol
Parameter
Conditions
Typ
102
Units
V
I
DSS
I
Drain Leakage Current
VGS=0V,VDS=48V
<10 <10 µA µA
Drain Leakage Current
VGS=0V,VDS=48V
DSS
V
BR(DSS)
Drain-Source Breakdown
VGS=0V,ID=1mA
110
<80
V
I
GSS
I
GateGate Leakage Current
Leakage
VGS=5V,VDS=0V
<1
µA
Symbol
Parameter
Current
Conditions
Typ
<1
Units
µA
VGS=5V,VDS=0V
I
1 GSS
Drain Leakage Current
VGS=0V,VDS=48V
<10
µA
DSS
G
P
V
BR(DSS)
Power Gain Gain
P
VGS=0V,ID=1mA
21
dB
Drain-Source Breakdown
OUT
=75W,F=1200MHz,1400MHz
G
1
Power
P
OUT
=75W,F=1200MHz,1400MHz
110
21
V
µA
dB
I
GSS
P
Gate Leakage Current
VGS=5V,VDS=0V
<1
1
IRL
DSS
1
Input Return Loss Loss
P
VGS=0V,VDS=48V
9
dB
I
Drain Leakage Current
<10
µA
OUT
=75W,F=1200MHz,1400MHz
Input Return
G
P1
IRL
Power Gain
P
OUT
P
OUT
=75W,F=1200MHz,1400MHz
21
9
=75W,F=1200MHz,1400MHz
dB
dB
1
Gate Leakage
<1
44
µA
Drain Efficiency
Current
P
VGS=5V,VDS=0V
44
%
D
I
GSS
1
OUT
=75W,F=1200MHz,1400MHz
1
Drain Efficiency
IRL
1
D
Input Return Loss
P
OUT
P
OUT
=75W,F=1200MHz,1400MHz
9
=75W,F=1200MHz,1400MHz
dB
%
1
Power Gain
=75W,F=1200MHz,1400MHz
PD
G
1
PD
1
Pulse Droop
P
P
OUT
P =75W,F=1200MHz,1400MHz
21
<0.6
dB
<0.6
dB
P
OUT
=75W,F=1200MHz,1400MHz
Pulse Droop
OUT
Drain Efficiency
P
OUT
=75W,F=1200MHz,1400MHz
44
%
dB
D
IRL
1
Input Return Loss
P
OUT
=75W,F=1200MHz,1400MHz
9
dB
PD
1
Pulse Droop
P =75W,F=1200MHz,1400MHz
<0.6
dB
1
Drain Efficiency
P
OUT
=75W,F=1200MHz,1400MHz
at VDD = 48V, IDQ
44
%
1.) Under Pulse Conditions: Pulse Width = 200µsec, Pulse DutyDuty Cycle = 10% at VDD = 48V, = 50mA
D
1.) Under Pulse Conditions: Pulse Width =
OUT
200µsec, Pulse Cycle = 10%
IDQ = 50mA
1
Under
at T
Conditions: Pulse
PD
1
Pulse Droop
P
OUT
=75W,F=1200MHz,1400MHz
<0.6
dB
2.) Rated
Pulse
CASE
T= 25°C25°C
Width = 200μsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA
1.)
2.) Rated at
Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA
Under Pulse
CASE
=
2
Rated at T
at T
= 25°C
25°C
CASE
2.) Rated
Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA
CASE
=
1.) Under
2.) Rated at T
CASE
= 25°C
ELECTRICAL CHARACTERISTICS
Symbol
Conditions
Symbol Parameter
Parameter
Conditions
ELECTRICAL CHARACTERISTICS
VGS=0V,ID=1mA
3mA
V
BR(DSS)
Drain-Source Breakdown
V
Drain-Source Breakdown
VGS=0V,ID=1mA
ELECTRICaL CHaRaCTERISTICS
HVVi Semiconductors, Inc. Inc.
HVVi Semiconductors,
st
HVVi Semiconductors, Inc.
10235 S.
Semiconductors, Inc.
10235 51
st
St. 100
HVVi
51 S.St. Suite Suite 100
10235 S. 51st St.
Phoenix,
S. 51
85044
Suite 100
10235
Az.
st
Az.
Suite 100
Phoenix,
St.
85044
HVVi Semiconductors, Inc.
Phoenix, AZ.
85044
Phoenix, Az.
st
85044
100
10235 S. 51 St. Suite
Phoenix, Az. 85044
For additional information, visit: visit:
www.hvvi.com
For additional information,
www.hvvi.com
For additional information:
HVVi Semiconductors,
visit:
Inc. Confidential
HVVi Semiconductors,
www.hvvi.com
For additional information,
Inc. Confidential
Tel:
HVVi
429-HVVi (4884) or visit www.hvvi.com
(866)
Semiconductors,
© 2008 2008 HVVi Semiconductors,All Rights Reserved.
Inc.
Inc. All Rights
©
HVVi Semiconductors,
Inc.
Confidential
Reserved.
For additional information, visit:
All Rights Reserved.
© 2008 HVVi Semiconductors, Inc.
www.hvvi.com
© 2008 HVVi Semiconductors,
Inc. Confidential
HVVi Semiconductors,
Inc. All Rights Reserved.
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
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EG-01-PO08X1
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EG-01-PO08X4
5/23/08
5/23/08
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10/13/08
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5/23/08
EG-01-PO08X1
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5/23/08
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