NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ
High Speed Switching. Suitable for Switching Regulator and Montor Control
KSH13003
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -65~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………40W
V
CBO
——Collector-Base
Voltage………………………………700V
V
CEO
——Collector-Emitter
Voltage……………………………400V
V
E B O
——
Emitter - Base Voltage………………………………9 V
I——
C
Collector Current……………………………………1 . 5 A
I
B
——Base
Curren………………………………………………0.75A
1―Base，B
２
―Collector，C
３
―
Emitter，E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
EBO
H
FE1
H
FE2
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)1
V
BE(sat)2
f
T
t
ON
t
STG
t
F
４００
１０
５
４
１０
４０
０．５
１
３
１
１．２
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
I
C
=5mA, I
B
=0
V
CE
=5V, I
C
=0.5A
V
CE
=2V, I
C
=1A
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
μＡ
V
EB
=9V, I
C
=0
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
ＭＨ�½�
V
CE
=10V,I
C
=0.1A
V
CC
=125V, I
C
=1A,
１．１ μs
４．０ μs
０．７ μs
I
B1
=0.2A,I
B2
=-0.2A
R
L
=125Ω
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h
FE
Classification
H1
10-16
H2
14-21
H3
19-26
H4
24-31
H5
29-40
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
