Shantou Huashan Electronic Devices Co.,Ltd.
█
Electrical Characteristics
（T
a
=25℃）
HTP4A60S
Symbol
I
DRM
Items
Repetitive Peak Off-State Current
Min.
Typ.
Max.
1.0
Unit
mA
Conditions
V
D
=V
DRM
, Single Phase,
Half Wave,
T
J
=125℃
I
T
=6A, Inst. Measurement
V
TM
I+
GT1
I-
GT1
I-
GT3
I+
GT3
V+
GT1
V-
GT1
V-
GT3
V+
GT3
V
GD
(dv/dt)c
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Current（Ⅳ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Gate Trigger Voltage（Ⅳ）
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
0.2
5
1.6
5.0
5.0
5.0
10.0
1.4
1.4
1.4
1.8
V
mA V
D
=6V, R
L
=10 ohm
mA
mA
mA
V
V
V
V
V
V/µS
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
T
J
=125℃,V
D
=2/3V
DRM
(di/dt)c= -0.5A/ms
I
H
Rth(j-c)
10
3
mA
℃/W
Junction to case
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
