Shantou Huashan Electronic Devices Co.,Ltd.
HTF8A80
ＮＯＮ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＴＲＩＡＣ （ＴＯ－２２０Ｆ ＰＡＣＫＡＧＥ）
█ Features
* Repetitive Peak Off-State Voltage: 800V
* R.M.S On-state Current(I
T(RMS)
=8A)
* High Commutation dv/dt
█ General
Description
The Triac HTP8A80 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
TO-220F
1 2
█
Absolute Maximum Ratings
（T
a
=25℃）
3
T
stg
——Storage
Temperature………………………………………………………………
－40~125℃
T
j
——Operating
Junction Temperature
…………………………………………………… －40~125℃
P
GM
——Peak
Gate Power Dissipation………………………………………………………………… 5W
V
DRM
——Repetitive
Peak Off-State Voltage………………………………………………………… 800V
I
T
（
RMS
）——R.M.S
On-State Current（Ta=105℃）………………………………………………… 8A
V
G M
——Peak
Gate Voltage
…………………………………………………………………
10V
I
G M
— —
P e a k G a t e C u r r e n t
… … … … … … … … … … … … … … … … … … … … … … …
2 . 0 A
I
TSM
——Surge
On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………… 80/88A
█
Electrical Characteristics
（T
a
=25℃）
Symbol
I
DRM
Items
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
0.2
10
Min.
Typ.
Max.
2.0
Unit
mA
Conditions
V
D
=V
DRM
, Single Phase,Half
Wave, T
J
=125℃
I
T
=12A, Inst. Measurement
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
T
J
=125℃,V
D
=400V
(di/dt)c=-4A/ms
I
H
Rth(j-c)
15
3.7
mA
℃/W
Junction to case
V
TM
I+
GT1
I-
GT1
I-
GT3
V+
GT1
V-
GT1
V-
GT3
V
GD
(dv/dt)c
1.4
30
30
30
1.5
1.5
1.5
V
mA
mA
mA
V
V
V
V
V/µS
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
