Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD435
█ APPLICATIONS
Medium Power Linear switching Applications
█
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 36W
V
CBO
——Collector-Base
Voltage…………………………… 32V
V
CEO
——Collector-Emitter
Voltage………………………… 32V
V
CES
——Collector-Emitter
Voltage………………………… 32V
V
EBO
——Emitter-Base
Voltage………………………………… 5V
I
C
——Collector
Current Pulse)
(
…………………………………
7A
I
C
——Collector
Current DC)
(
……………………………………
4A
I
B
——Base
Current………………………………………………1A
1―
Emitter, E
2―Collector,C
3―Base,B
█
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
*H
FE(1)
*H
FE(2)
*H
FE(3)
*V
CE(sat)
*V
BE(on)
V
CEO(sus)
f
t
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Current Gain-Bandwidth Product
32
3
40
85
50
0.2
130
140
100
1
μA
mA
V
CB
=32V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
0.5
1.1
V
V
V
MHz
I
C
=2A, I
B
=0.2A
V
CE
=1V, I
C
=2A
I
C
=100mA, I
B
=0
V
CE
=1V, I
C
=250mA,
*
Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed