NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
HS945
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………250mW
V
CBO
——Collector-Base
Voltage………………………………60V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current
……………………………………
150mA
TO-92
1―Emitter，E
2―Base，B
3― Collector，C
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE
６０
５０
５
７０
７００
０．３
１．０
１００
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
�½�Ａ
I
C
=100μA,
I
C
=100μA,
I
E
=0
I
B
=0
DC Current Gain
I
E
=100μA，I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0，f=1ＭＨ�½�
Ｖ
ＣＥ
＝６Ｖ，Ｉ
Ｃ
＝０．５�½�Ａ，�½�＝１ＫＨ�½�，
Ｒ�½�＝５００Ω
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(sat)
Base-Emitter Saturation Voltage
I
CBO
I
EBO
f
T
Cob
NF
Collector Cut-off Current
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
１００ �½�Ａ
３００
ＭＨ�½�
２．５
�½�Ｆ
４．０
�½�Ｂ
█
h
FE
Classification
O
Y
１２０—２４０
GR
２００—４００
BL
３５０—７００
７０—１４０
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
