Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HS669A
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APPLICATIONS
Low Frequancy Power Amplifier.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 20W
P
C
——Collector
Dissipation（T
A
=25℃）…………………… 1W
V
CBO
——Collector-Base
Voltage………………………… 180V
V
CEO
——Collector-Emitter
Voltage……………………… 160V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current………………………………………1.5A
1―Emitter，E
2―Collector，C
3―Base，B
TO-126
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
180
160
5
10
60
30
1
1.5
140
14
200
V
V
V
μA
I
C
= 1mA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 1mA, I
C
=0
V
CB
=160V, I
E
=0
V
CE
= 5V, I
C
= 150mA
V
CE
= 5V, I
C
= 500mA
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
V
BE
f
t
Cob
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
V
V
MHz
pF
I
C
= 500mA, I
B
= 50mA
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=150mA,
V
CB
=10V, I
E
=0，f=1MHz
Output Capacitance
█
h
FE
Classification
B
60—120
C
100—200
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
